MRF5S4125NR1 Freescale Semiconductor, MRF5S4125NR1 Datasheet

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MRF5S4125NR1

Manufacturer Part Number
MRF5S4125NR1
Description
MOSFET RF SGL 450MHZ TO-270-4
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF5S4125NR1

Transistor Type
N-Channel
Frequency
465MHz
Gain
23dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
1.1A
Voltage - Test
28V
Power - Output
25W
Package / Case
TO-270-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF5S4125NR1
Manufacturer:
FREESCALE
Quantity:
1 400
Part Number:
MRF5S4125NR1
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies up to 500 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 465 MHz: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 465 MHz, 125 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for broadband commercial and industrial applications with
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
I
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Output Power
DQ
Case Temperature 90°C, 125 W CW
Case Temperature 90°C, 25 W CW
Power Gain — 23 dB
Drain Efficiency — 30.2%
ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth
calculators by product.
Select Documentation/Application Notes - AN1955.
= 1100 mA, P
out
= 25 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
(1,2)
Characteristic
Rating
DD
Operation
DD
= 28 Volts,
Symbol
Symbol
V
R
V
T
DSS
T
θJC
GS
stg
J
Document Number: MRF5S4125N
450 - 480 MHz, 25 W AVG., 28 V
MRF5S4125NBR1
MRF5S4125NR1 MRF5S4125NBR1
MRF5S4125NR1
LATERAL N - CHANNEL
CASE 1486 - 03, STYLE 1
RF POWER MOSFETs
CASE 1484 - 04, STYLE 1
SINGLE N - CDMA
MRF5S4125NR1
MRF5S4125NBR1
TO - 270 WB - 4
- 65 to +150
Value
- 0.5, +65
- 0.5, +15
TO - 272 WB - 4
Value
0.33
0.43
200
(2,3)
Rev. 0, 1/2007
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

Related parts for MRF5S4125NR1

MRF5S4125NR1 Summary of contents

Page 1

... MHz AVG SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 270 MRF5S4125NR1 CASE 1484 - 04, STYLE 272 MRF5S4125NBR1 Symbol Value Unit V - 0.5, +65 Vdc DSS V - 0.5, +15 Vdc +150 °C stg T 200 °C J (2,3) Symbol Value Unit R °C/W θJC 0.33 0.43 MRF5S4125NR1 MRF5S4125NBR1 1 ...

Page 2

... Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Part internally input matched. MRF5S4125NR1 MRF5S4125NBR1 2 Rating 3 = 25°C unless otherwise noted) C Symbol ...

Page 3

... Microstrip Z11 0.071″ x 0.084″ Microstrip Z12 0.008″ x 0.084″ Microstrip Figure 1. MRF5S4125NR1(NBR1) Test Circuit Schematic Table 6. MRF5S4125NR1(NBR1) Test Circuit Component Designations and Values Part B1, B2 Ferrite Beads, Short C1, C6, C12, C13 120 pF Chip Capacitors C2, C10 0 ...

Page 4

... Figure 2. MRF5S4125NR1(NBR1) Test Circuit Component Layout MRF5S4125NR1 MRF5S4125NBR1 MRF5S4125N Rev. 1 C14 C15 C16 C13 C12 C9 C11 C10 RF Device Data Freescale Semiconductor ...

Page 5

... Watts Avg. out −20 0 −30 −5 −40 −10 −50 −15 −20 −60 490 500 = 58 Watts Avg. out = 28 Vdc I = 550 mA DQ 562.5 mA 1375 mA 1100 mA 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power MRF5S4125NR1 MRF5S4125NBR1 825 mA 200 300 5 ...

Page 6

... Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power MRF5S4125NR1 MRF5S4125NBR1 6 TYPICAL CHARACTERISTICS − Vdc 1100 mA, Two −Tone Measurements DQ (f1 + f2)/2 = Center Frequency of 465 MHz −20 −30 IM5 −U −40 −50 −60 100 200 300 1 Figure 8. Intermodulation Distortion Products P6dB = 52.98 dBm (198.6 W) P3dB = 52 ...

Page 7

... W Avg., and η is operated Vdc out MTTF calculator available at http:/www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. Figure 13. MTTF versus Junction Temperature I = 1100 465 MHz 100 150 200 P , OUTPUT POWER (WATTS) CW out 230 250 = 30.2%. D MRF5S4125NR1 MRF5S4125NBR1 32 V 250 7 ...

Page 8

... Through 13) 1.2288 MHz Channel Bandwidth 0.01 Carrier. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. PAR = 9 0.01% 0.001 Probability on CCDF. 0.0001 PEAK −TO−AVERAGE (dB) Figure 14. Single - Carrier CCDF N - CDMA MRF5S4125NR1 MRF5S4125NBR1 CDMA TEST SIGNAL −10 −20 −30 −40 −50 −60 −70 −80 −90 ...

Page 9

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Network Test Z Z source load Output Matching Network MRF5S4125NR1 MRF5S4125NBR1 9 ...

Page 10

... BOTTOM VIEW MRF5S4125NR1 MRF5S4125NBR1 10 PACKAGE DIMENSIONS DRAIN LEAD ...

Page 11

... RF Device Data Freescale Semiconductor MRF5S4125NR1 MRF5S4125NBR1 11 ...

Page 12

... MRF5S4125NR1 MRF5S4125NBR1 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MRF5S4125NR1 MRF5S4125NBR1 13 ...

Page 14

... AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Jan. 2007 • Initial Release of Data Sheet MRF5S4125NR1 MRF5S4125NBR1 14 PRODUCT DOCUMENTATION REVISION HISTORY Description RF Device Data Freescale Semiconductor ...

Page 15

... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007. All rights reserved. MRF5S4125NR1 MRF5S4125NBR1 15 ...

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