MRF7S19080HSR3 Freescale Semiconductor, MRF7S19080HSR3 Datasheet
MRF7S19080HSR3
Specifications of MRF7S19080HSR3
Related parts for MRF7S19080HSR3
MRF7S19080HSR3 Summary of contents
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... MHz AVG CASE 465- 06, STYLE 1 MRF7S19080HR3 CASE 465A - 06, STYLE 1 MRF7S19080HSR3 Symbol V DSS stg Symbol R θJC MRF7S19080HR3 MRF7S19080HSR3 Rev. 1, 12/2008 SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs NI - 780 NI - 780S Value Unit - 0.5, +65 Vdc - 6.0, +10 Vdc 32, +0 Vdc - 65 to +150 °C 150 °C 225 °C ...
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... ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. MRF7S19080HR3 MRF7S19080HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS ...
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... Min Typ Max = 750 mA, 1930 - 1990 MHz Bandwidth — 90 — — 0.165 — — 1.14 — — 2.25 — — 22.3 — — 0.009 — — 0.017 — MRF7S19080HR3 MRF7S19080HSR3 Unit MHz dB ° ns ° dB/°C dBm/°C 3 ...
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... Chip Capacitors C6 5.1 pF Chip Capacitor C8 6.8 pF Chip Capacitor C9 2.2 μF Chip Capacitor C12 470 μ Electrolytic Capacitor C13 100 μ Electrolytic Capacitor R1 330 Ω, 1/4 W Chip Resistor R2 10 Ω, 1/4 W Chip Resistor MRF7S19080HR3 MRF7S19080HSR3 DUT Z8 0.306″ x 0.388″ x 0.090″ Taper Z9 0.880″ ...
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... Figure 2. MRF7S19080HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C12 C13 C10 C11 C7 HV7 2.1 GHz NI780 Rev. 1 MRF7S19080HR3 MRF7S19080HSR3 5 ...
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... Vdc 1955 MHz 1965 MHz DD Two−Tone Measurements, 10 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF7S19080HR3 MRF7S19080HSR3 6 TYPICAL CHARACTERISTICS G ps η Vdc (Avg.) out = 750 mA, Single−Carrier W−CDMA IRL PARC 1920 2000 ...
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... IM3−L IM5−U IM5−L IM7−U IM7−L 10 TWO−TONE SPACING (MHz) versus Tone Spacing 60 Ideal Actual −30_C 25_C T = −30_C C 85_C 25_C 85_C Vdc 750 1960 MHz 1 10 100 P , OUTPUT POWER (WATTS) CW out versus CW Output Power MRF7S19080HR3 MRF7S19080HSR3 100 300 7 ...
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... W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ "5 MHz Offset. 0.001 PAR = 7 0.01% Probability on CCDF 0.0001 PEAK−TO−AVERAGE (dB) Figure 14. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal MRF7S19080HR3 MRF7S19080HSR3 8 TYPICAL CHARACTERISTICS 750 1960 MHz ...
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... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Network Test Z Z source load Output Matching Network MRF7S19080HR3 MRF7S19080HSR3 9 ...
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... C6 5.1 pF Chip Capacitor C8 6.8 pF Chip Capacitor C9 2.2 μF Chip Capacitor C12 470 μ Electrolytic Capacitor C13 100 μ Electrolytic Capacitor R1 330 Ω, 1/4 W Chip Resistor R2 10 Ω, 1/4 W Chip Resistor MRF7S19080HR3 MRF7S19080HSR3 SCDMA CHARACTERIZATION Z10 Z5 Z7 DUT Z9 0.432″ x 0.121″ Microstrip Z10 0.327″ ...
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... Figure 18. MRF7S19080HR3(HSR3) Test Circuit Component Layout — SCDMA RF Device Data Freescale Semiconductor C12 C13 C10 C11 C7 HV7 2.1 GHz NI780 Rev. 1 MRF7S19080HR3 MRF7S19080HSR3 11 ...
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... MHz BW −3.2 MHz Offset −90 −100 −110 −ALT1 in −120 1.28 MHz BW −1.6 MHz Offset −130 Center 2.0175 GHz 1.5 MHz f, FREQUENCY (MHz) Figure 21 Carrier TD - SCDMA Spectrum MRF7S19080HR3 MRF7S19080HSR3 12 TYPICAL CHARACTERISTICS = 750 η D Adj−U Alt− OUTPUT POWER (WATTS) AVG ...
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... Z = Device input impedance as measured from in gate to ground Test circuit impedance as measured load from drain to ground. Output Device Matching Under Test Network load MRF7S19080HR3 MRF7S19080HSR3 13 ...
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... (FLANGE) D bbb (LID (FLANGE (FLANGE (LID (FLANGE) D bbb (LID) ccc M (INSULATOR) bbb SEATING T PLANE A A (FLANGE) MRF7S19080HR3 MRF7S19080HSR3 14 PACKAGE DIMENSIONS Q 2X bbb (INSULATOR) bbb ccc aaa ccc SEATING T PLANE CASE 465 - 06 ISSUE 780 MRF7S19080HR3 ccc aaa CASE 465A - 06 ISSUE 780S MRF7S19080HSR3 NOTES: 1 ...
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... Updated Fig. 14, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal, to better represent production test signal Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description the RF test condition voltage callout for max value from 3.8 to 3.5 to match production test value GS( GS(Q) MRF7S19080HR3 MRF7S19080HSR3 15 ...
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... P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 303 - 675 - 2140 Fax 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF7S19080HR3 MRF7S19080HSR3 Document Number: MRF7S19080H Rev. 1, 12/2008 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...