MRF7S21080HR5 Freescale Semiconductor, MRF7S21080HR5 Datasheet

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MRF7S21080HR5

Manufacturer Part Number
MRF7S21080HR5
Description
MOSFET RF N-CH 22W NI-780
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF7S21080HR5

Transistor Type
N-Channel
Frequency
2.11GHz
Gain
18dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
800mA
Voltage - Test
28V
Power - Output
22W
Package / Case
NI-780
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
22W
Power Gain (typ)@vds
18dB
Frequency (min)
2.11GHz
Frequency (max)
2.17GHz
Package Type
NI-780
Pin Count
3
Input Capacitance (typ)@vds
160@28VpF
Output Capacitance (typ)@vds
296@28VpF
Reverse Capacitance (typ)
0.64@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
32%
Mounting
Screw
Mode Of Operation
1-Carrier W-CDMA/CDMA/TD-SCDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF7S21080HR5
Manufacturer:
FREESCALE
Quantity:
1 400
Part Number:
MRF7S21080HR5
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for TD - SCDMA and PCN - PCS/cellular radio
applications.
• Typical Single - Carrier W - CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 80 Watts CW
• P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for CDMA base station applications with frequencies from 2110 to
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
800 mA, P
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Peak Tuned Output Power
Operation
Case Temperature 79°C, 79 W CW
Case Temperature 75°C, 22 W CW
out
Power Gain — 18 dB
Drain Efficiency — 32%
Device Output Signal PAR — 6.5 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth
calculators by product.
Select Documentation/Application Notes - AN1955.
@ 1 dB Compression Point w 80 Watts CW
out
= 22 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
(1,2)
Characteristic
Rating
DD
= 28 Volts, I
DQ
=
Symbol
Symbol
V
R
V
V
T
T
DSS
T
θJC
GS
DD
stg
C
J
Document Number: MRF7S21080H
CASE 465- 06, STYLE 1
CASE 465A - 06, STYLE 1
MRF7S21080HR3 MRF7S21080HSR3
2110 - 2170 MHz, 22 W AVG., 28 V
MRF7S21080HSR3
MRF7S21080HR3
MRF7S21080HSR3
MRF7S21080HR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780
NI - 780S
SINGLE W - CDMA
- 65 to +150
Value
- 0.5, +65
- 6.0, +10
32, +0
Value
0.60
0.65
150
225
(2,3)
Rev. 0, 11/2007
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
1

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MRF7S21080HR5 Summary of contents

Page 1

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF7S21080H ...

Page 2

... Vdc — 2.7 — Vdc 4 5.5 7 Vdc 0.1 0.2 0.3 Vdc — 0.64 — pF — 296 — pF — 160 — Avg 2112.5 MHz and f = out 16 — % 5.7 6.5 — dB — dBc — (continued) RF Device Data Freescale Semiconductor ...

Page 3

... W CW 2140 MHz out Part - to - Part Insertion Phase Variation @ 2140 MHz, Six Sigma Window Gain Variation over Temperature ( - 30°C to +85°C) Output Power Variation over Temperature ( - 30°C to +85°C) RF Device Data Freescale Semiconductor = 25°C unless otherwise noted) (continued) C Symbol = 28 Vdc VBW = 22 W Avg. ...

Page 4

... Taconic TLX8 - 0300, 0.030″, ε * Variable for tuning Description Part Number ATC100B6R8BT500XT ATC100B0R5BT500XT 18125C224KAT1A C5750X5R1H106M ATC100B1R5BT500XT ATC100B0R2BT500XT 222213668221 CRCW12062001FKEA CRCW120610R0FKEA V SUPPLY + C13 C16 RF OUTPUT Z10 Z11 Z12 Z13 C15 = 2.55 r Manufacturer ATC ATC AVX TDK ATC ATC Vishay Vishay Vishay RF Device Data Freescale Semiconductor ...

Page 5

... C17 C2 Figure 2. MRF7S21080HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C4 C12 C3 C10 R3 C11 C14 MRF7S21080H V DD C13 C16 C15 Rev. 1 MRF7S21080HR3 MRF7S21080HSR3 5 ...

Page 6

... Vdc 2135 MHz 2145 MHz = 400 mA 600 mA 1200 mA 1000 mA 800 mA 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power RF Device Data Freescale Semiconductor 200 ...

Page 7

... DPD Corrected, with Memory Correction − OUTPUT POWER (dBm) out Figure 10. Digital Predistortion Correction versus ACPR and Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS − Two−Tone Measurements −20 (f1 + f2)/2 = Center Frequency of 2140 MHz −30 −40 −50 −60 −70 100 400 1 Figure 8 ...

Page 8

... Figure 15. Single - Carrier W - CDMA Spectrum 130 150 170 190 210 230 T , JUNCTION TEMPERATURE (° Avg., and η Vdc 32%. DD out D 3.84 MHz Channel BW −ACPR in 3.84 MHz Integrated BW Integrated BW −5.4 −3.6 −1.8 0 1.8 3.6 5.4 7.2 f, FREQUENCY (MHz) RF Device Data Freescale Semiconductor 250 9 ...

Page 9

... MHz f = 2220 MHz Figure 16. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor = 25 Ω load f = 2220 MHz f = 2060 MHz Z source f = 2060 MHz Vdc 800 mA Avg out source MHz W 2060 7.16 - j11.074 4.403 - j6.809 2080 7.066 - j10.796 4.275 - j6.662 2100 6 ...

Page 10

... U −−− 0.040 −−− 1.02 Z −−− 0.030 −−− 0.76 aaa 0.005 REF 0.127 REF F bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE RF Device Data Freescale Semiconductor ...

Page 11

... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Nov. 2007 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRF7S21080HR3 MRF7S21080HSR3 11 ...

Page 12

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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