MRF7S19080HSR5 Freescale Semiconductor, MRF7S19080HSR5 Datasheet

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MRF7S19080HSR5

Manufacturer Part Number
MRF7S19080HSR5
Description
MOSFET RF N-CH NI-880S
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF7S19080HSR5

Transistor Type
N-Channel
Frequency
1.93GHz
Gain
18dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
750mA
Voltage - Test
28V
Power - Output
24W
Package / Case
NI-880S
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
© Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for TD - SCDMA and PCN - PCS/cellular radio
applications.
• Typical Single - Carrier W - CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 80 Watts CW
• P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for CDMA base station applications with frequencies from 1930 to
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
750 mA, P
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Output Power
Operation
Case Temperature 81°C, 79 W CW
Case Temperature 79°C, 24 W CW
out
Power Gain — 18 dB
Drain Efficiency — 32%
Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth
calculators by product.
Select Documentation/Application Notes - AN1955.
@ 1 dB Compression Point w 80 Watts CW
out
= 24 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
(1,2)
Characteristic
Rating
DD
= 28 Volts, I
DQ
=
Symbol
Symbol
V
R
V
V
T
T
DSS
T
θJC
GS
DD
stg
C
J
Document Number: MRF7S19080H
CASE 465- 06, STYLE 1
CASE 465A - 06, STYLE 1
MRF7S19080HR3 MRF7S19080HSR3
1930 - 1990 MHz, 24 W AVG., 28 V
MRF7S19080HSR3
MRF7S19080HR3
MRF7S19080HSR3
MRF7S19080HR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780
NI - 780S
SINGLE W - CDMA
- 65 to +150
Value
- 0.5, +65
- 6.0, +10
32, +0
Value
0.60
0.69
150
225
(2,3)
Rev. 1, 12/2008
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
1

Related parts for MRF7S19080HSR5

MRF7S19080HSR5 Summary of contents

Page 1

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007-2008. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF7S19080H ...

Page 2

... Vdc 2 2.7 3.5 Vdc 0.1 0.21 0.3 Vdc — 0.64 — pF — 297 — Avg 1932.5 MHz and f = out — % 5.7 6.2 — dB — dBc — (continued) RF Device Data Freescale Semiconductor ...

Page 3

... W CW 1960 MHz out Part - to - Part Insertion Phase Variation @ 1960 MHz, Six Sigma Window Gain Variation over Temperature ( - 30°C to +85°C) Output Power Variation over Temperature ( - 30°C to +85°C) RF Device Data Freescale Semiconductor (continued) = 25°C unless otherwise noted) C Symbol = 28 Vdc VBW = 24 W Avg ...

Page 4

... ATC100B5R1CT500XT ATC100B6R8CT500XT C1825C225J5RAC EKME630ELL471MK25S MCHT101M1HB - 1017 - RH CRCW12063300FKEA CRCW120610R0FKEA V SUPPLY + + C8 C9 C10 C11 C12 C13 RF OUTPUT Z10 Z12 Z13 C7 Z11 = 2.55 r Part Number Manufacturer ATC ATC TDK ATC Kemet ATC ATC Kemet United Chemi - Con Multicomp Vishay Vishay RF Device Data Freescale Semiconductor ...

Page 5

... Figure 2. MRF7S19080HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C12 C13 C10 C11 C7 HV7 2.1 GHz NI780 Rev. 1 MRF7S19080HR3 MRF7S19080HSR3 5 ...

Page 6

... −10 −2.6 −15 −2.8 −20 −3 −25 −3.2 −30 2080 = 28 Vdc 1955 MHz 1965 MHz = 375 mA 562.5 mA 937.5 mA 750 mA 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power RF Device Data Freescale Semiconductor 200 ...

Page 7

... DPD Corrected, with Memory Correction − OUTPUT POWER (dBm) out Figure 10. Digital Predistortion Correction versus ACPR and Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Vdc Two−Tone Measurements −10 (f1 + f2)/2 = Center Frequency of 1960 MHz −20 −30 −40 5th Order −50 −60 ...

Page 8

... Figure 15. Single - Carrier W - CDMA Spectrum 130 150 170 190 210 230 T , JUNCTION TEMPERATURE (° Avg., and η Vdc 32%. DD out D 3.84 MHz Channel BW −ACPR in 3.84 MHz Integrated BW Integrated BW −5.4 −1.8 3.6 7.2 −3.6 0 1.8 5.4 f, FREQUENCY (MHz) RF Device Data Freescale Semiconductor 250 9 ...

Page 9

... Figure 16. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor = 10 Ω 2040 MHz Z load f = 1880 MHz 2040 MHz source f = 1880 MHz Vdc 750 mA Avg out source load MHz W W 1880 1.47 - j7.3 2.10 - j5.4 1900 1.22 - j6.7 1.96 - j5.0 1920 1 ...

Page 10

... ATC100B6R8CT500XT C1825C225J5RAC EKME630ELL471MK25S MCHT101M1HB - 1017 - RH CRCW12063300FKEA CRCW120610R0FKEA V SUPPLY + + C8 C9 C10 C11 C12 C13 RF OUTPUT Z11 Z12 Z14 Z15 C7 Z13 = 2.55 r Part Number Manufacturer ATC ATC TDK ATC Kemet ATC ATC Kemet United Chemi - Con Multicomp Vishay Vishay RF Device Data Freescale Semiconductor ...

Page 11

... Figure 18. MRF7S19080HR3(HSR3) Test Circuit Component Layout — SCDMA RF Device Data Freescale Semiconductor C12 C13 C10 C11 C7 HV7 2.1 GHz NI780 Rev. 1 MRF7S19080HR3 MRF7S19080HSR3 11 ...

Page 12

... MHz Channel BW VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz +ALT2 in 1.28 MHz BW +3.2 MHz Offset −ALT1 in +ALT1 in 1.28 MHz BW 1.28 MHz BW −1.6 MHz Offset +1.6 MHz Offset 2.5 MHz Span 25 MHz f, FREQUENCY (MHz) RF Device Data Freescale Semiconductor ...

Page 13

... Figure 23. Series Equivalent Input and Load Impedance — SCDMA RF Device Data Freescale Semiconductor = 10 Ω load f = 1950 MHz f = 2070 MHz f = 1950 MHz f = 2070 MHz Vdc 750 load MHz W W 1950 1.87 - j6.10 2.98 - j5.42 1960 1.94 - j6.25 3.07 - j5.47 1970 1.77 - j6.04 2 ...

Page 14

... U −−− 0.040 −−− 1.02 Z −−− 0.030 −−− 0.76 aaa 0.005 REF 0.127 REF F bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE RF Device Data Freescale Semiconductor ...

Page 15

... Updated Part Numbers in Tables 5 and 6, Component Designations and Values, to latest RoHS compliant part numbers • Updated Fig. 14, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal, to better represent production test signal Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description to V ...

Page 16

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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