MRF7S15100HSR3 Freescale Semiconductor, MRF7S15100HSR3 Datasheet - Page 10
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MRF7S15100HSR3
Manufacturer Part Number
MRF7S15100HSR3
Description
MOSFET RF N-CH 28V 23W NI780S
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF7S15100HR3.pdf
(13 pages)
Specifications of MRF7S15100HSR3
Transistor Type
N-Channel
Frequency
1.51GHz
Gain
19.5dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
600mA
Voltage - Test
28V
Power - Output
23W
Package / Case
NI-780S
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
23W
Power Gain (typ)@vds
19.5dB
Frequency (min)
1.47GHz
Frequency (max)
1.51GHz
Package Type
NI-780S
Pin Count
3
Input Capacitance (typ)@vds
176@28VpF
Output Capacitance (typ)@vds
300@28VpF
Reverse Capacitance (typ)
0.6@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
32%
Mounting
Surface Mount
Mode Of Operation
1-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRF7S15100HSR3
Manufacturer:
HITTITE
Quantity:
8 900
Part Number:
MRF7S15100HSR3
Manufacturer:
FREESCALE
Quantity:
20 000
MRF7S15100HR3 MRF7S15100HSR3
10
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
56
55
54
53
52
51
50
49
48
47
46
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
27
P1dB
Figure 13. Pulsed CW Output Power
28
P1dB = 50.95 dBm (125 W)
Test Impedances per Compression Level
versus Input Power @ 28 V
29
30
P
2.02 + j6.21
in
, INPUT POWER (dBm)
Z
P3dB = 51.63 dBm (146 W)
V
10 μsec(on), 10% Duty Cycle, f = 1500 MHz
source
DD
31
Ω
= 28 Vdc, I
32
DQ
33
= 600 mA, Pulsed CW
2.00 - j3.65
34
Z
load
Ω
35
Ideal
36
Actual
37
Freescale Semiconductor
RF Device Data