MRF8S9100HR5 Freescale Semiconductor, MRF8S9100HR5 Datasheet - Page 3

• Manufacturer Part Number: MRF8S9100HR5
• Description: MOSFET RF N-CH 100W NI-780
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S9100HR5

• Transistor Type: N-Channel
• Frequency: 920MHz
• Gain: 19.3dB
• Voltage - Rated: 70V
• Current Rating: 10µA
• Current - Test: 500mA
• Voltage - Test: 28V
• Power - Output: 72W
• Package / Case: NI-780
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) V
920--960 MHz EDGE Modulation
P
IMD Symmetry @ 100 W PEP, P
VBW Resonance Point
Gain Flatness in 40 MHz Bandwidth @ P
Gain Variation over Temperature
Output Power Variation over Temperature
out
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
(--30°C to +85°C)
(--30°C to +85°C)
@ 1 dB Compression Point, CW

30 dBc
Frequency
920 MHz
940 MHz
960 MHz
Characteristic
out
where IMD Third Order
(T
out
A
= 25°C unless otherwise noted) (continued)
= 72 W CW
(dB)
19.1
19.1
19.0
G
DD
ps
= 28 Vdc, I
Symbol
VBW
IMD
∆P1dB
P1dB
∆G
G
DQ
sym
F
(%)
η
res
43
44
45
D
= 500 mA, 920--960 MHz Bandwidth
Min
DD
—
—
—
—
—
—
@ 400 kHz
= 28 Vdc, I
(dBc)
--64.1
--63.6
--62.8
SR1
MRF8S9100HR3 MRF8S9100HSR3
0.005
0.13
0.02
Typ
108
30
4
DQ
= 700 mA, P
@ 600 kHz
(dBc)
--74.5
--74.6
--75.1
SR2
Max
—
—
—
—
—
—
out
= 45 W Avg.,
(% rms)
EVM
dB/°C
dB/°C
MHz
MHz
1.8
2.0
2.3
Unit
dB
W
3