MRF7S15100HR5 Freescale Semiconductor, MRF7S15100HR5 Datasheet

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MRF7S15100HR5

Manufacturer Part Number
MRF7S15100HR5
Description
MOSFET RF N-CH 28V 23W NI780
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF7S15100HR5

Transistor Type
N-Channel
Frequency
1.51GHz
Gain
19.5dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
600mA
Voltage - Test
28V
Power - Output
23W
Package / Case
NI-780
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF7S15100HR5
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
1510 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulations.
• Typical Single - Carrier W - CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1490 MHz, 100 Watts CW
• Typical P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Freescale Semiconductor
Technical Data
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
Thermal Resistance, Junction to Case
Designed for CDMA base station applications with frequencies from 1470 to
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
600 mA, P
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Output Power
Operation
Derate above 25°C
Case Temperature 80°C, 55 W CW
Case Temperature 77°C, 23 W CW
Power Gain — 19.5 dB
Drain Efficiency — 32%
Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth
calculators by product.
Select Documentation/Application Notes - AN1955.
out
out
@ 1 dB Compression Point ' 100 Watts CW
= 23 Watts Avg., f = 1507.5 MHz, IQ Magnitude Clipping,
A
= 25°C
(1,2)
Characteristic
Rating
DD
= 28 Volts, I
DQ
=
Symbol
Symbol
V
R
V
V
CW
T
T
DSS
T
θJC
GS
DD
stg
C
J
Document Number: MRF7S15100H
CASE 465 - 06, STYLE 1
CASE 465A - 06, STYLE 1
MRF7S15100HR3 MRF7S15100HSR3
1470 - 1510 MHz, 23 W AVG., 28 V
MRF7S15100HSR3
MRF7S15100HR3
MRF7S1500HR3
MRF7S1500HSR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780
NI - 780S
SINGLE W - CDMA
- 65 to +150
Value
- 0.5, +65
- 6.0, +10
32, +0
Value
0.36
0.65
0.74
150
225
75
(2,3)
Rev. 2, 6/2009
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
1

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MRF7S15100HR5 Summary of contents

Page 1

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008-2009. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF7S15100H ...

Page 2

... Vdc 2 2.7 3.5 Vdc 0.1 0.2 0.3 Vdc — 0.6 — pF — 300 — pF — 176 — Avg 1507.5 MHz, Single - Carrier out 18 19 — % 5.9 6.2 — dB — dBc — (continued) RF Device Data Freescale Semiconductor ...

Page 3

... W CW 1490 MHz out Part - to - Part Insertion Phase Variation @ 1490 MHz, Six Sigma Window Gain Variation over Temperature ( - 30°C to +85°C) Output Power Variation over Temperature ( - 30°C to +85°C) RF Device Data Freescale Semiconductor (continued) = 25°C unless otherwise noted) A Symbol = 28 Vdc P1dB ...

Page 4

... ATC100B150JT500XT ATC100B0R5BT500XT ATC100B100JT500XT C4532JB1H685MT 222215371101 C3225JB2A225MT 1606 - TLC CRCW12061000FKEA CRCW12061002FKEA V SUPPLY C9 OUTPUT Z19 Z20 Z21 Z22 Z23 Z24 Z25 C6 V SUPPLY C13 = 2.55 r Part Number Manufacturer Fair - Rite ATC ATC ATC TDK Vishay TDK Coilcraft Vishay Vishay RF Device Data Freescale Semiconductor RF ...

Page 5

... MRF7S15100H/HS Rev. 3 Figure 2. MRF7S15100HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C11 C9 C10 C6 C12 C13 C7 MRF7S15100HR3 MRF7S15100HSR3 5 ...

Page 6

... W (PEP 600 mA out DQ IM3−L IM3−U IM5−U IM5−L IM7−U IM7−L 10 TWO−TONE SPACING (MHz) versus Tone Spacing −15 55 η −20 ACPR 45 −25 − −35 35 −40 30 PARC − Device Data Freescale Semiconductor 100 ...

Page 7

... Figure 7. Single - Carrier W - CDMA Power Gain, Drain 1150 Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS = 28 Vdc 600 mA 1490 MHz 85_C DD DQ 85_C G ps 25_C T = −30_C C ACPR Input Signal PAR = 7 0.01% η D Probability on CCDF OUTPUT POWER (WATTS) AVG. out Efficiency and ACPR versus Output Power ...

Page 8

... MHz Integrated BW −70 − −90 −100 −7.2 −9 Figure 11. Single - Carrier W - CDMA Spectrum 3.84 MHz Channel BW +ACPR in 3.84 MHz Integrated BW −5.4 −1.8 3.6 7.2 −3.6 0 1.8 5.4 f, FREQUENCY (MHz) RF Device Data Freescale Semiconductor 9 ...

Page 9

... Figure 12. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor = 10 Ω load f = 1570 MHz f = 1410 MHz f = 1570 MHz f = 1410 MHz Z source Vdc 600 mA Avg out source load MHz W W 1410 2.51 - j5.82 4.12 - j4.20 1430 2.53 - j5.58 3.95 - j4.07 1450 2 ...

Page 10

... P1dB = 50.95 dBm (125 Vdc 600 mA, Pulsed μsec(on), 10% Duty Cycle 1500 MHz INPUT POWER (dBm) in Test Impedances per Compression Level Z Z source load Ω Ω P1dB 2.02 + j6.21 2.00 - j3.65 Figure 13. Pulsed CW Output Power versus Input Power @ 28 V Actual Device Data Freescale Semiconductor ...

Page 11

... B 2 (FLANGE) D bbb (FLANGE (FLANGE (FLANGE) D bbb (LID) ccc M (INSULATOR) bbb SEATING PLANE A A (FLANGE) RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS Q 2X bbb (INSULATOR) bbb ccc T M (LID) aaa T M ccc SEATING T PLANE CASE 465 - 06 ISSUE 780 MRF7S15100HR3 Z 4X (LID ccc ...

Page 12

... Fig. 10, CCDF W - CDMA IQ Magnitude Clipping, Single - Carrier Test Signal and Fig. 11, Single - Carrier W - CDMA Spectrum updated to show the undistorted input test signal • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation, Tools and Software MRF7S15100HR3 MRF7S15100HSR3 12 REVISION HISTORY Description RF Device Data Freescale Semiconductor ...

Page 13

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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