MRF7S18125AHSR3 Freescale Semiconductor, MRF7S18125AHSR3 Datasheet - Page 8

• Manufacturer Part Number: MRF7S18125AHSR3
• Description: MOSFET RF N-CH CW 125W NI780S
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S18125AHSR3

• Transistor Type: N-Channel
• Frequency: 1.88GHz
• Gain: 17dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 1.1A
• Voltage - Test: 28V
• Power - Output: 125W
• Package / Case: NI-780S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

8
MRF7S18125AHR3 MRF7S18125AHSR3
24
20
16
12
8
4
0
1
V
f = 1840 MHz, EDGE Modulation
Figure 13. EVM and Drain Efficiency versus
DD
= 28 Vdc, I
P
out
DQ
, OUTPUT POWER (WATTS) AVG.
= 1100 mA
10
Output Power
η
D
85_C
−30_C
10
10
10
10
10
7
6
5
9
8
90
Figure 15. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
100
TYPICAL CHARACTERISTICS
T
110
EVM
85_C
C
= 25_C
−30_C
25_C
130
T
DD
J
, JUNCTION TEMPERATURE (°C)
500
= 28 Vdc, P
60
50
40
30
10
0
20
150
out
170
= 125 W CW, and η
19
18
17
16
15
14
190
1810
Figure 14. Power Gain versus Frequency
210
1820
D
= 55%.
230
T
C
1830
= −30_C
f, FREQUENCY (MHz)
25_C
250
85_C
1840
Freescale Semiconductor
1850
V
P
I
1860
DQ
DD
out
RF Device Data
= 1100 mA
= 125 W CW
= 28 Vdc
1870
1880