SHF-0289 Sirenza Microdevices Inc, SHF-0289 Datasheet

SHF-0289

Manufacturer Part Number

SHF-0289

Description

IC HFET ALGAAS/GAAS 1W SOT-89

Manufacturer

Sirenza Microdevices Inc

Datasheet

1.SHF-0289Z.pdf (6 pages)

Specifications of SHF-0289

Transistor Type

HFET

Frequency

1.96GHz

Gain

20dB

Voltage - Rated

Current Rating

400mA

Noise Figure

4dB

Current - Test

200mA

Voltage - Test

Power - Output

30.2dBm

Package / Case

SOT-89

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

599-1061-2

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SHF-0289

Manufacturer:

SIRENZA

Quantity:

1 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SHF-0289Z

Manufacturer:

RFMD

Quantity:

2 900

Company:

Meier Automation Equipment Co., Limited

Part Number:

SHF-0289Z

Manufacturer:

SIRENZA

Quantity:

20 000

Current page: 1 of 6
Download datasheet (179Kb)

Product Description

RFMD’s SHF-0289 is a high performance AIGaAs/GaAs Heterostructure FET (HFET)

housed in a low-cost surface-mount plastic package. The HFET technology improves

breakdown voltage while minimizing Schottky leakage current resulting in higher

PAE and improved linearity. Output power at 1dB compression for the SHF-0289 is

+30dBm when biased for Class AB operation at 7V, 200mA. The +43dBm third

order intercept makes it ideal for high dynamic range, high intercept point require-

ments. It is well suited for use in both analog and digital wireless communication

infrastructure and subscriber equipment including 3G, cellular, PCS, fixed wireless,

EDS-101241 Rev F

Maximum Available Gain

Insertion Gain

Power Gain

Output Power at 1dB Compression

Output Third Order Intercept Point

IS-95 Channel Power (-45dBc ACPR)

Noise Figure

Saturated Drain Current

Transconductance

Pinch-Off Voltage

Gate-Source Breakdown Voltage

Gate-Drain Breakdown Voltage

Thermal Resistance, (Junction - Lead)

Operating Voltage

Operating Current

Power Dissipation

Test Conditions: V

test.

an engineering application circuit board. The application circuit was designed for the optimum combination of linearity, P

tion is specified to maintain T

Optimum Technology

Matching® Applied

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MEMS

[2] Sample Tested - Samples pulled from each wafer/package lot. Sample test specifications are based on statistical data from sample test measurements. The test fixture is

[2]

Parameter

[1]

[3]

=7V, I

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

and pager systems.

=200mA (unless otherwise noted)

<140°C at T

[1]

[2]

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SHF-0289(Z)

0.05GHz to

6GHz, 1.0Watt

GaAs HFET

=85°C. V

Typical Gain Performance (7V,200mA)

Min.

16.7

13.1

28.7

40.5

408

288

-3.0

<1.4W is recommended for continuous reliable operation.

Specification

Frequency (GHz)

[1] 100% Tested - Insertion gain tested using a 50Ω contact board (no matching circuitry) during final production

Gain

Typ.

19.5

18.5

14.6

30.2

43.0

23.7

588

396

-1.9

4.0

-17

-22

Gmax

Max.

RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)

20.3

16.1

768

504

-1.0

280

-15

-17

8.0

1.4

0.05GHz to 6GHz, 1.0WATT GaAs HFET

Unit

°C/W

dBm

1dB

0.90GHz, Z

1.96GHz, Z

2.14GHz, Z

0.90GHz, Z

1.96GHz, Application Circuit

drain-source

drain-source, quiescent

and VSWR.

=2.4mA, drain open

=2.4mA, V

=2.0V, I

Features

Applications

DSP

High Linearity Performance at

1.96GHz

+30dBm P

+43dBm OIP

+23.7dBm IS-95 Channel

Power

+14.6dB Gain

+21.7dBm W-CDMA Channel

Power

High Drain Efficiency (>50%

at P

Analog and Digital Wireless

Systems

3G, Cellular, PCS

Fixed Wireless, Pager Sys-

tems

, V

SHF-0289(Z)

1dB

=1.2mA

=0V

=-0.25V

*, Z

[3] Maximum recommended power dissipa-

*, Z

=50Ω

=-5.0V

)

Condition

1dB

Package: SOT-89

1 of 6

Related parts for SHF-0289

SHF-0289 Summary of contents

Page 1

... The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB compression for the SHF-0289 is +30dBm when biased for Class AB operation at 7V, 200mA. The +43dBm third order intercept makes it ideal for high dynamic range, high intercept point require- ments ...

Page 2

... SHF-0289(Z) Absolute Maximum Ratings Parameter Drain Current ( Forward Gate Current (I ) GSF Reverse Gate Current (I ) GSR Drain-to-Source Voltage ( Gate-to-Source Voltage ( Input Power ( Operating Lead Temperature ( Storage Temperature Range (T ) STOR Power Dissipation (P ) DISS Channel Temperature ( Operation of this device beyond any one of these limits may cause permanent dam- age ...

Page 3

... The SHF-0289 is a depletion mode FET and requires a negative gate voltage. Normal pinchoff variation from part-to-part precludes the use of a fixed gate voltage for all devices. Active bias circuitry or manual gate bias alignment is recommended to maintain acceptable RF performance (RF and thermal). 2. Active bias circuitry is strongly recommended for class A operation (backoff > 6dB). ...

Page 4

... SHF-0289(Z) Pin Function Description 1 Gate RF input. 2 Source Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. 3 Drain RF output. 4 Source Same as pin 2. Mounting and Thermal Considerations It is very important that adequate heat sinking be provided to minimize the device junction temperature. The following items should be implemented to maximize MTTF and RF performance ...

Page 5

... Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. EDS-101241 Rev F Package Drawing Dimensions in inches (millimeters) .161 .016 .177 .068 .019 .096 .041 .015 .059 Part Symbolization Ordering Information Reel Size Devices/Reel 7” 1000 7” 1000 SHF-0289(Z) .118 ...

Page 6

... SHF-0289(Z) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com EDS-101241 Rev F ...

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