Product Description
Sirenza Microdevices’ SPF-2086TK is a high performance
0.25µm pHEMT Gallium Arsenide FET with Schottky barrier
gates. This 300µm device is ideally biased at 3V,20mA for lowest
noise performance and battery powered requirements. At
5V,40mA the device delivers excellent output TOI of 32 dBm.
It provides ideal performance as driver stages in many
commercial, industrial and military LNA applications.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza
Microdevices product for use in life-support devices and/or systems.
Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court, Broomfield, CO 80021
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Low Noise pHEMT GaAs FET
0.1 - 6 GHz Operation
Product Features
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+32 dBm Output IP3
LNA for Analog and Digital Wireless Systems
3G, Cellular, PCS
Fixed Wireless, Pager Systems
Driver Stage for low power applications
+20 dBm Output Power at 1dB Compression
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http://www.sirenza.com
EDS-101225 Rev. D
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