MRF6S9125MBR1 Freescale Semiconductor, MRF6S9125MBR1 Datasheet - Page 3

• Manufacturer Part Number: MRF6S9125MBR1
• Description: MOSFET RF N-CH 28V 27W TO-272-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S9125MBR1

• Transistor Type: N-Channel
• Frequency: 880MHz
• Gain: 20.2dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 27W
• Package / Case: TO-272-4
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) V
P
Typical CW Performances (In Freescale GSM Test Fixture, 50 οhm system) V
921 MHz<Frequency<960 MHz
out
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
Power Gain
Drain Efficiency
Input Return Loss
P
out
(f = 880 MHz)
= 60 W Avg., 921 MHz<Frequency<960 MHz
@ 1 dB Compression Point, CW
Characteristic
(T
C
= 25°C unless otherwise noted)
(continued)
Symbol
DD
P1dB
EVM
SR1
SR2
G
G
IRL
η
η
= 28 Vdc, I
ps
ps
D
D
DQ
Min
DD
—
—
—
—
—
—
—
—
—
= 700 mA, P
= 28 Vdc, I
MRF6S9125MR1 MRF6S9125MBR1
Typ
125
- 63
- 78
- 12
1.5
20
40
19
62
DQ
out
= 950 mA,
= 125 W,
Max
—
—
—
—
—
—
—
—
—
% rms
Unit
dBc
dBc
dB
dB
dB
W
%
%
3