MRFG35003MT1 Freescale Semiconductor, MRFG35003MT1 Datasheet

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MRFG35003MT1

Manufacturer Part Number
MRFG35003MT1
Description
MOSFET RF 3.5GHZ 3W 12V 1.5-PLD
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRFG35003MT1

Transistor Type
pHEMT FET
Frequency
3.55GHz
Gain
11.5dB
Voltage - Rated
15V
Current Rating
1.3A
Current - Test
55mA
Voltage - Test
12V
Power - Output
3W
Package / Case
PLD-1.5
Channel Type
N
Configuration
Single
Gate-source Voltage (max)
5V
Drain-source Volt (max)
15V
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Noise Figure
-
Lead Free Status / Rohs Status
Not Compliant
 Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
linear base station applications.
• Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,
• 3 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. Moisture Sensitivity Level
Replaced by MRFG35003NT1. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead - free
terminations.
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Simulated.
Drain - Source Voltage
Total Device Dissipation @ T
Gate - Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
Operating Case Temperature Range
Thermal Resistance, Junction to Case
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
@ 0.01% Probability)
I
Derate above 25°C
DQ
Output Power — 300 mWatt
Power Gain — 11.5 dB
Efficiency — 25%
= 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
(1)
Test Methodology
C
= 25°C
Characteristic
Rating
Class AB
Rating
1
Symbol
Symbol
V
R
V
T
P
P
T
T
DSS
Package Peak Temperature
θJC
GS
stg
ch
Document Number: MRFG35003MT1
D
in
C
MRFG35003MT1
CASE 466 - 03, STYLE 1
260
3.5 GHz, 3 W, 12 V
- 65 to +150
- 20 to +85
GaAs PHEMT
POWER FET
0.05
18.5
Value
8.1
Value
175
15
29
PLASTIC
- 5
PLD - 1.5
(2)
(2)
(2)
MRFG35003MT1
Rev. 3, 1/2006
W/°C
°C/W
Unit
dBm
Unit
Unit
Vdc
Vdc
°C
°C
°C
°C
W
1

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MRFG35003MT1 Summary of contents

Page 1

... Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 1. For reliable operation, the operating channel temperature should not exceed 150°C. 2. Simulated.  Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRFG35003MT1 Symbol V DSS ...

Page 2

... DD DQ Drain Efficiency ( Vdc mA 0.30 W Avg out f = 3.55 GHz) Adjacent Channel Power Ratio ( Vdc 0.30 W Avg out 3.55 GHz CDMA, 8.5 P/A @ 0.01% Probability, 64 CH, 3.84 MCPS) MRFG35003MT1 2 = 25°C unless otherwise noted) C Symbol I DSS I GSS I DSO I DSX V GS(th) V GS( 1dB ...

Page 3

... Rogers 4350, 0.020″, ε = 3.5 r Part Number Manufacturer 100A7R5JP150X ATC 08051J3R9BBT AVX 100A100JP500X ATC 100A101JP500X ATC 100B101JP500X ATC 100B102JP500X ATC ATC ATC ATC 08051J0R7BBT AVX 08051J0R2BBT AVX 08051J0R8BBT AVX 08051J1R0BBT AVX 08051J1R2BBT AVX 08051J0R5BBT AVX Newark MRFG35003MT1 V DD C18 C19 RF OUTPUT 3 ...

Page 4

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 3.5 GHz Test Circuit Component Layout MRFG35003MT1 4 C6 C15 ...

Page 5

... GHz, 8.5 P/A 3GPP W−CDMA Γ = 0.813é−106.27_, Γ = 0.734é−142.65_ OUTPUT POWER (WATTS) out Figure 4. Transducer Gain and Power Added Efficiency versus Output Power and Γ are the impedances presented to the DUT −10 −20 −30 −40 −50 − PAE MRFG35003MT1 5 ...

Page 6

... MRFG35003MT1 Vdc ∠ φ 8.644 88.22 0.038 7.924 85.88 0.039 7.317 83.57 0.039 6.811 81 ...

Page 7

... MRFG35003MT1 7 ...

Page 8

... MRFG35003MT1 8 NOTES RF Device Data Freescale Semiconductor ...

Page 9

... RF Device Data Freescale Semiconductor NOTES MRFG35003MT1 9 ...

Page 10

... MRFG35003MT1 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

... S 0.006 0.012 0.15 U 0.006 0.012 0.15 ZONE V 0.000 0.021 0.00 ZONE W 0.000 0.010 0.00 ZONE X 0.000 0.010 0.00 MRFG35003MT1 0.115 2.92 inches mm MAX 6.73 5.97 1.83 3.81 0.66 1.12 1.78 1.60 4.57 7.24 6.48 6.10 0.20 1.60 5.33 0.31 ...

Page 12

... For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program http://www.freescale.com/epp. MRFG35003MT1 Document Number: MRFG35003MT1 Rev. 3, 1/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products ...

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