MRF7S21170HS Freescale Semiconductor, MRF7S21170HS Datasheet - Page 6

• Manufacturer Part Number: MRF7S21170HS
• Description: IC MOSFET RF N-CHAN NI-880S
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S21170HS

• Transistor Type: N-Channel
• Frequency: 2.11GHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 50W
• Package / Case: NI-880S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

6
MRF7S21170HR3 MRF7S21170HSR3
18
17
16
15
14
13
1
700 mA
I
DQ
1050 mA
1400 mA
1750 mA
Figure 5. Two- -Tone Power Gain versus
= 2100 mA
V
Two--Tone Measurements, 10 MHz Tone Spacing
P
DD
out
, OUTPUT POWER (WATTS) PEP
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Output Power
10
Figure 3. Output Peak- -to- -Average Ratio Compression (PARC)
Figure 4. Output Peak- -to- -Average Ratio Compression (PARC)
17
16
15
14
13
12
10
17
16
15
14
13
12
10
11
11
2060
2060
9
9
PARC
PARC
IRL
η
IRL
Broadband Performance @ P
η
Broadband Performance @ P
G
G
D
D
ps
ps
2080
2080
100
V
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
DD
TYPICAL CHARACTERISTICS
2100
2100
= 28 Vdc, P
V
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @ 0.01%
Probability (CCDF)
DD
= 28 Vdc, P
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
2120
2120
out
400
= 50 W (Avg.), I
2140
2140
out
= 84 W (Avg.), I
2160
2160
out
out
--10
--20
--30
--40
--50
--60
DQ
= 1400 mA
= 50 Watts Avg.
= 84 Watts Avg.
2180
2180
1
Figure 6. Third Order Intermodulation Distortion
DQ
V
Two--Tone Measurements, 10 MHz Tone Spacing
I
DQ
= 1400 mA
DD
= 700 mA
2200
2200
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
1050 mA
P
out
2220
2220
, OUTPUT POWER (WATTS) PEP
versus Output Power
36
34
32
30
28
0
--1
--2
44
42
40
38
36
--2
--3
--4
--3
--5
10
1750 mA
2100 mA
--5
--10
--15
--20
--25
--5
--10
--15
--20
--25
Freescale Semiconductor
1400 mA
RF Device Data
100
400