NE68139-T1-A CEL, NE68139-T1-A Datasheet - Page 12
![TRANSISTOR NPN 1GHZ SOT-143](/photos/5/65/56546/ne68139-t1-a_sml.jpg)
NE68139-T1-A
Manufacturer Part Number
NE68139-T1-A
Description
TRANSISTOR NPN 1GHZ SOT-143
Manufacturer
CEL
Specifications of NE68139-T1-A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.2dB ~ 2dB @ 1GHz
Gain
13.5dB
Power - Max
200mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 7mA, 3V
Current - Collector (ic) (max)
65mA
Mounting Type
Surface Mount
Package / Case
SOT-143, SOT-143B, TO-253AA
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.065 A
Power Dissipation
0.2 W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NE68139-ATR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NE68139-T1-A
Manufacturer:
CEL
Quantity:
6 000
BJT NONLINEAR MODEL PARAMETERS
Note:
1. This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
NE68118 NONLINEAR MODEL
SCHEMATIC
(1) Gummel-Poon Model
Parameters
RBM
VAR
MJE
CJC
VAF
CJE
VJE
ISC
IRB
VJC
IKF
ISE
NR
NC
RC
BR
IKR
RE
RB
BF
NF
NE
IS
1.77e-11
2.7e-16
1.2e-12
0.8e-12
Infinity
Infinity
1.2e-5
0.055
1.02
0.77
0.27
185
Q1
2.1
0.6
3.7
0.5
15
12
1
1
0
8
2
Parameters
Base
XCJC
MJC
MJS
CJS
VJS
PTF
XTB
XTF
VTF
FC
EG
TF
ITF
XTI
KF
TR
AF
L
BX
(1)
C
14e-12
L
0.3e-9
BEPKG
0.56
0.75
B
1.11
0.5
0.1
Q1
25
0
0
0
3
0
0
3
0
1
C
C
CBPKG
CB
Emitter
L
L
E
EX
C
UNITS
ADDITIONAL PARAMETERS
L
MODEL RANGE
Frequency:
Bias:
Date:
CE
C
L
C
Parameters
Parameter
time
capacitance
inductance
resistance
voltage
current
C
L
CEPKG
C
C
L
L
L
C
C
C
L
L
L
CX
B
C
E
0.05 to 5.0 GHz
V
5/29/96
CB
CE
CBPKG
CEPKG
BEPKG
BX
CX
EX
CE
Q1
= 2.5 V to 8.0 V, I
Collector
C
= 3 mA to 10 mA
NE681 SERIES
0.07e-12
0.01e-12
1.16e-9
1.54e-9
0.83e-9
0.09e-12
0.51e-12
0.25e-12
0.18e-9
0.8e-9
0.09e-9
seconds
farads
henries
ohms
volts
amps
Units
68118