START499ETR STMicroelectronics, START499ETR Datasheet - Page 4
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START499ETR
Manufacturer Part Number
START499ETR
Description
TRANS RF SILICON NPN SOT-343
Manufacturer
STMicroelectronics
Datasheet
1.START499ETR.pdf
(14 pages)
Specifications of START499ETR
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
4.5V
Frequency - Transition
1.9GHz
Noise Figure (db Typ @ F)
3.3dB @ 1.8GHz
Gain
15dB
Power - Max
600mW
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 160mA, 4V
Current - Collector (ic) (max)
600mA
Mounting Type
Surface Mount
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8293-2
START449ETR
START449ETR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
START499ETR
Manufacturer:
ST
Quantity:
2 140
Part Number:
START499ETR
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
2
4/14
Electrical characteristics
Table 4.
Table 5.
Symbol
P
I
I
h
IP3
CBO
EBO
NF
-1dB
G
FE
Class-AB (Icq = 5 mA)
Mode of operation
Collector cutoff current
Emitter-base cutoff current
DC current gain
Power gain
1dB compression point
Ouput third order intercept
point
Noise figure
Electrical characteristics (t
Quick reference data
Parameter
f (GHz)
1.9
V
V
I
I
f = 1.8 GHz
I
f = 1.8 GHz
I
f = 1.8 GHz
I
f = 1.8 GHz
C
C
C
C
C
CB
EB
= 160 mA, V
= 200 mA, V
= 200 mA,V
= 200 mA, V
= 200 mA, V
= 1.5 V, I
= 5 V, I
J
= 25 °C, unless otherwise specified)
Test conditions
V
CE
E
3.6
= 0 A
C
(V)
CE
CE
CE
CE
CE
= 0 A
= 3 V,
= 4 V
= 3 V,
= 3 V,
= 3 V,
P
L
(dBm)
26
Min
G
P
≤ 12
(dB)
23.5
33.5
Typ
160
3.3
15
START499ETR
Max
120
1.2
typ. 68
η
(%)
dBm
dBm
Unit
µA
µA
dB
dB