NE678M04-A CEL, NE678M04-A Datasheet - Page 4
![TRANSISTOR NPN 1.8GHZ M04](/photos/5/63/56359/51-m04_sml.jpg)
NE678M04-A
Manufacturer Part Number
NE678M04-A
Description
TRANSISTOR NPN 1.8GHZ M04
Manufacturer
CEL
Datasheet
1.NE678M04-A.pdf
(8 pages)
Specifications of NE678M04-A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
6V
Frequency - Transition
12GHz
Noise Figure (db Typ @ F)
1.7dB ~ 2.5dB @ 2GHz
Gain
13.5dB
Power - Max
205mW
Dc Current Gain (hfe) (min) @ Ic, Vce
75 @ 30mA, 3V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
M04
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.1 A
Power Dissipation
205 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NE678M04
TYPICAL PERFORMANCE CURVES
10
25
20
15
10
10
10
25
25
20
20
15
15
25
20
15
5
0
5
5
0
0
-10
5
0
-10
-10
-10
COLLECTOR CURRENT, COLLECTOR
COLLECTOR CURRENT, COLLECTOR
COLLECTOR CURRENT, COLLECTOR
V
f = 0.9 GHz
I
V
V
f = 1.8 GHz
f = 1.8 GHz
I
I
V
f = 2.4 GHz
I
cq
cq
cq
cq
CE
CE
CE
CE
= 10 mA (RF OFF)
= 10 mA (RF OFF)
= 10 mA (RF OFF)
= 10 mA (RF OFF)
OUTPUT POWER, POWER GAIN,
OUTPUT POWER, POWER GAIN,
OUTPUT POWER, POWER GAIN,
EFFICIENCY vs. INPUT POWER
EFFICIENCY vs. INPUT POWER
EFFICIENCY vs. INPUT POWER
= 3.2 V
= 2.8 V
= 2.8 V
= 3.2 V
-5
-5
-5
-5
Input Power P
Input Power P
Input Power P
0
0
0
0
P
P
G
G
P
η
η
G
η
I
I
I
out
out
C
C
out
C
P
P
C
C
C
P
in
in
in
5
5
5
5
(dBm)
(dBm)
(dBm)
P
G
η
I
out
C
C
P
10
10
10
10
15
15
15
15
250
200
150
100
50
0
250
250
200
200
150
150
100
100
50
50
0
0
250
200
150
100
50
0
(T
A
= 25 °C)
10
25
20
15
5
0
-10
V
f = 1.8 GHz
I
COLLECTOR CURRENT, COLLECTOR
cq
CE
= 10 mA (RF OFF)
OUTPUT POWER, POWER GAIN,
= 3.2 V
EFFICIENCY vs. INPUT POWER
-5
Input Power P
0
P
G
η
I
out
C
C
P
in
5
(dBm)
10
15
250
200
150
100
50
0