NE662M04-T2-A CEL, NE662M04-T2-A Datasheet - Page 5

• Manufacturer Part Number: NE662M04-T2-A
• Description: TRANSISTOR NPN 2GHZ M04
• Manufacturer: CEL

Specifications of NE662M04-T2-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.3V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 1.5dB @ 2GHz
• Gain: 20dB
• Power - Max: 115mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: M04
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.035 A
• Power Dissipation: 115 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
30.00
10.00
5.00
0.00
25.00
20.00
15.00
30
20
10
40
30
20
10
0
0
0.1
0.1
1
MAXIMUM STABLE GAIN, INSERTION
POWER GAIN, MAXIMUM AVAILABLE
f = 1 GHz, V
FORWARD INSERTION GAIN AND
GAIN vs. COLLECTOR CURRENT
FORWARD INSERTION GAIN
MAXIMUM AVAILABLE GAIN
Collector Current, I
CE
MSG
Frequency, f (GHz)
Frequency, f (GHz)
vs. FREQUENCY
vs. FREQUENCY
= 2 V
V
1
I
1
CE
10
C
IS
I
= 5 mA
V
IS
C
MSG
21
= 2 V,
CE
= 20 mA
21
I
V
2
I
CE
= 2 V,
2
2
2
C
= 2 V, I
(mA)
MAG
C
= 20 mA
MAG
(T
10
A
12
100
10
= 25˚C)
30.00
10.00
5.00
0.00
25.00
20.00
15.00
40
30
20
10
0
0.1
1
MAXIMUM STABLE GAIN, INSERTION
POWER GAIN, MAXIMUM AVAILABLE
MSG
FORWARD INSERTION GAIN AND
GAIN vs. COLLECTOR CURRENT
MAXIMUM AVAILABLE GAIN
Collector Current, I
Frequency, f (GHz)
vs. FREQUENCY
MSG
1
10
IS
IS
21
MAG
21
I
2
I
V
f = 2 GHz, V
2
CE
2
C
= 2 V, I
(mA)
C
NE662M04
CE
= 5 mA
MAG
= 2 V
100
10