NE58219-A CEL, NE58219-A Datasheet - Page 4

• Manufacturer Part Number: NE58219-A
• Description: TRANSISTOR BIPOLAR .9GHZ 3-SMINI
• Manufacturer: CEL

Specifications of NE58219-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 5GHz
• Power - Max: 100mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 5V
• Current - Collector (ic) (max): 60mA
• Mounting Type: Surface Mount
• Package / Case: 1608
• Dc Collector/base Gain Hfe Min: 120
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.06 A
• Power Dissipation: 0.1 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NE58219-T1-A

4
20
15
10
5
0
0.1
MAXIMUM AVAILABLE GAIN
INSERTION POWER GAIN vs. FREQUENCY
MAXIMUM AVAILABLE GAIN,
INSERTION POWER GAIN vs. FREQUENCY
0.2
f – Frequency – GHz
0.5
1
S
MAG
21e
2
2
V
I
C
CE
= 5 mA
= 5 V
5
5.0
2.0
1.0
0.5
0.2
0.1
1
f = 1 MHz
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
V
CB
2
– Collector to Base Voltage – V
NE58219 / 2SC5004
5
10
20
50