NE68130-T1-A CEL, NE68130-T1-A Datasheet - Page 13
![TRANSISTOR NPN 1GHZ SOT-323](/photos/5/26/52615/pkg_sot-323_sml.jpg)
NE68130-T1-A
Manufacturer Part Number
NE68130-T1-A
Description
TRANSISTOR NPN 1GHZ SOT-323
Manufacturer
CEL
Specifications of NE68130-T1-A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
7GHz
Noise Figure (db Typ @ F)
1.5dB ~ 1.6dB @ 1GHz ~ 2GHz
Gain
9dB ~ 13.5dB
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 7mA, 3V
Current - Collector (ic) (max)
65mA
Mounting Type
Surface Mount
Package / Case
SOT-323
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.065 A
Power Dissipation
150 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2SC4227-T1-A
NE68130-ATR
NE68130-ATR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NE68130-T1-A
Manufacturer:
CEL
Quantity:
6 000
Part Number:
NE68130-T1-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
SCHEMATIC
NE68119 NONLINEAR MODEL
BJT NONLINEAR MODEL PARAMETERS
(1) Gummel-Poon Model
Parameters
RBM
VAR
MJE
CJC
CJE
VJE
VJC
IKR
ISC
IRB
VAF
NR
NC
RC
BF
NE
BR
RE
RB
IKF
NF
ISE
IS
1.77e-11
1.2e-12
0.8e-12
2.7e-16
Infinity
1.2e-5
Infinity
185.0
0.055
0.77
0.27
1.02
15.0
Q1
2.1
0.6
3.7
0.5
12
1
1
2
8
0
Parameters
Base
XCJC
MJC
CJS
XTF
VTF
PTF
XTB
VJS
MJS
XTI
ITF
EG
TF
TR
KF
AF
FC
L
BX
14.0e-12
0.3e-9
(1)
0.56
0.75
1.11
0.5
0.1
25
Q1
0
0
0
3
0
0
3
0
1
L
B
C
C
CBPKG
CB
Emitter
L
L
E
EX
UNITS
ADDITIONAL PARAMETERS
MODEL RANGE
Frequency:
Bias:
C
CE
C
time
capacitance
inductance
resistance
voltage
current
Parameter
CEPKG
L
Parameters
C
C
L
L
C
C
L
L
L
CX
B
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
0.05 to 3.0 GHz
V
CE
Q1
= 2.5 V to 8.0 V, I
Collector
C
= 0.3 mA to 10 mA
0.07e-12
0.01e-12
1.13e-9
0.85e-9
0.18e-12
0.21e-12
0.19e-9
0.19e-9
0.19e-9
68119
NE681 SERIES
seconds
henries
ohms
volts
amps
farads
Units