NE68819-A CEL, NE68819-A Datasheet - Page 14

• Manufacturer Part Number: NE68819-A
• Description: TRANSISTOR NPN 2GHZ SC-90
• Manufacturer: CEL

Specifications of NE68819-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.7dB ~ 2.5dB @ 2GHz
• Power - Max: 125mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 3mA, 1V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: 3-XSOF, MiniMold
• Dc Collector/base Gain Hfe Min: 70
• Dc Current Gain Hfe Max: 140
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 6 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 0.125 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

BJT NONLINEAR MODEL PARAMETERS
NE688 SERIES
(1) Gummel-Poon Model
NE68819 NONLINEAR MODEL
SCHEMATIC
Parameters
RBM
VAR
MJE
VAF
CJE
VJE
CJC
VJC
IKR
ISC
IRB
IKF
ISE
NE
BR
NR
RE
RB
BF
NF
NC
RC
IS
0.796e-12
0.549e-12
3.8e-16
3.8e-15
3.5e-16
135.7
0.001
1.49
12.3
0.06
6.14
0.71
0.38
0.65
1.62
Q1
0.6
1.1
3.5
0.4
3.5
4.2
28
1
Parameters
XCJC
MJC
MJS
Base
CJS
VJS
PTF
XTB
XTF
VTF
EG
FC
TF
XTI
KF
ITF
TR
AF
0.19 nH 1.12 nH
L
BX
11.0e-12
1.5e-14
32e-12
C
0.3 pF
0.48
0.56
0.75
0.75
0.36
0.65
0.61
1.11
1.22
Q1
BEPKG
50
L
0
0
0
3
B
0.24 pF
(1)
0.08 pF
C
C
CBPKG
CB
Emitter
0.19 nH
0.6 nH
L
L
0.27 pF
EX
UNITS
E
MODEL RANGE
Frequency:
Bias:
Date:
ADDITIONAL PARAMETERS
C
CE
C
0.3 pF
0.5 nH
Parameter
time
capacitance
inductance
resistance
voltage
current
CEPKG
Parameters
C
C
L
L
C
C
C
L
L
L
L
Q1
B
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
BEPKG
CX
0.1 to 3 GHz
V
3/20/97
CE
= 1 V to 3 V, I
Collector
C
= 1 mA to 10 mA
0.24e-12
0.27e-12
1.12e-9
0.6e-9
0.08e-12
0.3e-12
0.3e-12
0.19e-9
0.5e-9
0.19e-9
68819
seconds
farads
henries
ohms
volts
amps
Units