NESG250134-T1-AZ CEL, NESG250134-T1-AZ Datasheet - Page 4

• Manufacturer Part Number: NESG250134-T1-AZ
• Description: TRANS NPN 900MHZ SOT-89
• Manufacturer: CEL

Specifications of NESG250134-T1-AZ

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 9.2V
• Frequency - Transition: 10GHz
• Gain: 23dB
• Power - Max: 1.5W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 100mA, 3V
• Current - Collector (ic) (max): 500mA
• Mounting Type: Surface Mount
• Package / Case: SOT-89
• Continuous Collector Current: 500 mA
• Emitter- Base Voltage Vebo: 2.8 V
• Mounting Style: SMD/SMT
• Power Dissipation: 1.5 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACHTERISTICS
Remark The graphs indicate nominal characteristics.
0.0001
1,000
0.001
0.01
100
500
400
300
200
100
2.0
1.6
1.2
0.8
0.4
0.1
1.5
10
0
1
0
0.4
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
Mounted on Glass epoxy PWB
(34.2 cm
Nature Neglect
CE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
= 3 V
Collector to Emitter Voltage V
0.5
25
Base to Emitter Voltage V
1
Ambient Temperature T
2
× 0.8 mm (t) )
0.6
50
2
0.7
75
3
100
0.8
10 mA
A
9 mA
BE
8 mA
(T
(ºC)
7 mA
CE
(V)
A
6 mA
I
4
125
B
0.9
5 mA
= +25°C, unless otherwise specified )
(V)
= 1 mA
4 mA
3 mA
2 mA
150
1.0
5
0.0001
1,000
0.001
0.01
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
10
0
1
0.4
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
V
CE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
= 4 V
0.5
Collector to Base Voltage V
Base to Emitter Voltage V
2
0.6
4
0.7
6
0.8
BE
CB
f = 1 MHz
(V)
8
(V)
0.9
1.0
10