NESG260234-T1-AZ CEL, NESG260234-T1-AZ Datasheet - Page 3

• Manufacturer Part Number: NESG260234-T1-AZ
• Description: TRANS NPN 460MHZ SOT-89
• Manufacturer: CEL

Specifications of NESG260234-T1-AZ

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 9.2V
• Power - Max: 1.9W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 100mA, 3V
• Current - Collector (ic) (max): 600mA
• Mounting Type: Surface Mount
• Package / Case: SOT-89
• Continuous Collector Current: 600 mA
• Emitter- Base Voltage Vebo: 2.8 V
• Mounting Style: SMD/SMT
• Power Dissipation: 1.9 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Frequency - Transition: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document No. PU10547EJ02V0DS (2nd edition)
Date Published May 2005 CP(K)
Printed in Japan
FEATURES
• This product is suitable for medium output power (1 W) amplification
• MSG (Maximum Stable Gain) = 23 dB TYP. @ V
• Using UHS2-HV process (SiGe technology), V
• 3-pin power minimold (34 PKG)
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NESG260234
NESG260234-T1
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Notes 1. Contains Lead in the part except the electrode terminals.
Remark To order evaluation samples, contact your nearby sales office.
Note Mounted on 34.2 cm
Part Number
P
P
out
out
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
2. With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
= 30 dBm TYP. @ V
= 30 dBm TYP. @ V
your nearby sales office.
Unit sample quantity is 25 pcs.
Parameter
NESG260234-AZ
NESG260234-T1-AZ
MEDIUM OUTPUT POWER AMPLIFICATION (1 W)
Order Number
2
CE
CE
× 0.8 mm (t) glass epoxy PWB
= 6 V, P
= 6 V, P
3-PIN POWER MINIMOLD (34 PKG)
NPN SiGe RF TRANSISTOR FOR
Symbol
NPN SILICON GERMANIUM RF TRANSISTOR
P
V
V
V
The mark
T
tot
CBO
CEO
I
T
EBO
stg
C
3-pin power minimold
(Pb-Free)
Note
j
in
in
= 15 dBm, f = 460 MHz
= 20 dBm, f = 900 MHz
A
= +25°C)
Package
DATA SHEET
CBO
Note1, 2
shows major revised points.
CE
(ABSOLUTE MAXIMUM RATINGS) = 25 V
−65 to +150
= 6 V, Ic = 100 mA, f = 460 MHz
Ratings
600
150
9.2
2.8
1.9
25
25 pcs
(Non reel)
1 kpcs/reel
Quantity
• Magazine case
• 12 mm wide embossed taping
• Pin 2 (Emitter) face the perforation side of the tape
Unit
mA
°C
°C
W
V
V
V
NESG260234
©
NEC Compound Semiconductor Devices, Ltd. 2004, 2005
Supplying Form