NE85618-A CEL, NE85618-A Datasheet - Page 17
![TRANSISTOR NPN 1GHZ SOT-343](/photos/5/64/56472/sot-343_pkg_sml.jpg)
NE85618-A
Manufacturer Part Number
NE85618-A
Description
TRANSISTOR NPN 1GHZ SOT-343
Manufacturer
CEL
Datasheet
1.NE85619-T1-A.pdf
(26 pages)
Specifications of NE85618-A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
6.5GHz
Noise Figure (db Typ @ F)
1.4dB ~ 2.1dB @ 1GHz ~ 2GHz
Gain
7dB ~ 13dB
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 20mA, 10V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.1 A
Power Dissipation
150 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NE85619 NONLINEAR MODEL
(1) Gummel-Poon Model
Note:
This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
SCHEMATIC
BJT NONLINEAR MODEL PARAMETERS
Parameters
RBM
VAR
CJE
MJE
CJC
VAF
VJE
ISE
ISC
IRB
VJC
IKF
NR
NC
RC
BR
IKR
RE
RB
BF
NF
NE
IS
3.2e-15
1.96e-4
2.8e-12
1.1e-12
6e-16
0.991
0.98
0.08
1.93
0.17
0.38
4.16
120
Q1
3.9
3.6
1.3
0.5
0.7
10
12
0
2
2
Parameters
XCJC
MJC
MJS
XTB
CJS
VJS
PTF
Base
XTF
VTF
FC
EG
TF
ITF
XTI
KF
TR
AF
L
BX
(1)
10e-12
1e-9
0.55
0.75
1.11
0.3
0.5
0.2
Q1
10
L
0
0
6
0
0
3
0
1
B
C
C
CBPKG
CB
Emitter
L
UNITS
L
ADDITIONAL PARAMETERS
MODEL RANGE
Frequency:
Bias:
E
EX
C
CE
Parameter
time
capacitance
inductance
resistance
voltage
current
Parameters
C
C
L
L
C
C
L
L
L
B
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
Q1
V
0.05 to 3.0 GHz
CE
C
L
CEPKG
CX
= 2.5 V to 10 V, I
Collector
C
= 0.3 mA to 10 mA
0.087e-12
0.16e-12
1.84e-9
0.56e-9
0.08e-12
0.39e-12
0.19e-9
0.19e-9
0.19e-9
NE85619
NE856 SERIES
seconds
farads
henries
ohms
volts
amps
Units