NE68130-A CEL, NE68130-A Datasheet - Page 15
![TRANSISTOR NPN 1GHZ SOT-323](/photos/5/26/52615/pkg_sot-323_sml.jpg)
NE68130-A
Manufacturer Part Number
NE68130-A
Description
TRANSISTOR NPN 1GHZ SOT-323
Manufacturer
CEL
Specifications of NE68130-A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
7GHz
Noise Figure (db Typ @ F)
1.5dB ~ 1.6dB @ 1GHz ~ 2GHz
Gain
9dB ~ 13.5dB
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 7mA, 3V
Current - Collector (ic) (max)
65mA
Mounting Type
Surface Mount
Package / Case
SOT-323
Dc Collector/base Gain Hfe Min
40
Dc Current Gain Hfe Max
240
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
0.065 A
Power Dissipation
0.150 W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Note:
This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
SCHEMATIC
BJT NONLINEAR MODEL PARAMETERS
(1) Gummel-Poon Model
NE68133 NONLINEAR MODEL
Parameters
RBM
VAR
MJE
CJC
VAF
CJE
VJE
VJC
ISE
IKR
ISC
IRB
IKF
NF
NE
BR
NR
RE
RB
BF
NC
RC
IS
1.77e-11
2.7e-16
1.2e-12
0.8e-12
Infinity
Infinity
1.2e-5
0.055
1.02
0.77
0.27
185
Q1
2.1
0.6
3.7
0.5
15
12
1
1
0
8
2
Parameters
XCJC
MJC
MJS
CJS
XTF
VTF
PTF
XTB
VJS
XTI
ITF
EG
FC
TR
KF
TF
AF
Base
C
BEPKG
L
BX
14e-12
0.3e-9
0.56
0.75
1.11
Q1
0.5
0.1
25
0
0
0
3
0
0
3
0
1
(1)
L
B
C
C
CBPKG
CB
Emitter
L
L
E
EX
C
CE
C
Q1
CEPKG
L
CX
MODEL RANGE
Frequency:
Bias:
Date:
UNITS
ADDITIONAL PARAMETERS
Parameters
time
capacitance
inductance
resistance
voltage
current
Parameter
Collector
C
C
L
L
C
C
C
L
L
L
B
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
BEPKG
0.1 to 8.0 GHz
V
7/97
CE
= 1 V to 8 V, I
NE681 SERIES
C
seconds
farads
henries
ohms
volts
amps
Units
0.07e-12
0.01e-12
0.01e-12
0.2e-12
0.2e-12
= 1 mA to 30 mA
0.9e-9
1.2e-9
0.3e-9
0.6e-9
0.3e-9
68133