NE68530-A CEL, NE68530-A Datasheet - Page 14

• Manufacturer Part Number: NE68530-A
• Description: TRANSISTOR NPN 2GHZ SOT-323
• Manufacturer: CEL

Specifications of NE68530-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 12GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.5dB @ 2GHz
• Gain: 7dB
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 10mA, 3V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: SOT-323
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NE685 SERIES
BJT NONLINEAR MODEL PARAMETERS
NE68539 NONLINEAR MODEL
(1) Gummel-Poon Model
SCHEMATIC
Parameters
RBM
VAR
MJE
CJE
VJE
CJC
VJC
IRB
VAF
ISE
NF
BR
NR
IKR
ISC
RE
RB
RC
BF
IKF
NE
NC
IS
0.18e-12
7.9e-13
0.4e-12
Infinity
7e-16
0.009
0.19
2.19
1.08
12.4
8.34
0.81
0.75
Q1
1.3
0.5
109
15
10
10
1
1
0
2
Parameters
Base
XCJC
MJC
MJS
CJS
VJS
PTF
XTB
XTF
VTF
EG
FC
TF
ITF
XTI
KF
TR
AF
L
BX
C
2e-12
0.011
L
0.34
0.75
4.58
1e-9
1.11
BEPKG
Q1
0.5
5.2
B
0
0
0
0
0
3
0
1
C
C
(1)
CBPKG
CB
Emitter
L
L
E
EX
C
UNITS
ADDITIONAL PARAMETERS
MODEL RANGE
Frequency:
Bias:
Date:
CE
L
C
Q1
Parameter
time
capacitance
inductance
resistance
voltage
current
C
L
CEPKG
Parameters
C
C
L
L
L
C
C
C
L
L
L
CX
B
C
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
BEPKG
0.05 to 3.0 GHz
V
6/12/96
CE
= 0.5 V to 3.0 V, I
Collector
C
= 0.5 mA to 20 mA
0.13e-12
0.14e-12
1.34e-9
0.7e-9
0.99e-9
0.08e-12
0.08e-12
0.01e-12
0.39e-9
0.39e-9
0.2e-9
68539
seconds
farads
henries
ohms
volts
amps
Units