NE85633-R25-A CEL, NE85633-R25-A Datasheet - Page 5

• Manufacturer Part Number: NE85633-R25-A
• Description: TRANSISTOR NPN 1GHZ SOT-23
• Manufacturer: CEL

Specifications of NE85633-R25-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 7GHz
• Noise Figure (db Typ @ F): 1.4dB ~ 2dB @ 1GHz
• Gain: 9dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 20mA, 10V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SOT-23
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 0.2 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
NE85600
TYPICAL NOISE PARAMETERS
NE85630
TYPICAL NOISE PARAMETERS
V
V
V
V
V
FREQ.
(MHz)
FREQ.
CE
1000
2000
4000
(MHz)
CE
CE
CE
CE
500
1000
1000
1500
1000
1500
2000
1000
1500
2000
3000
500
800
500
800
500
800
500
= 2.5 V, I
= 2.5 V, I
= 2.5 V, I
= 10 V, I
= 10 V, I
25
20
15
10
5
0
NF
C
C
NF
(dB)
C
C
C
0.1
(dB)
1.88
2.63
3.14
1.34
1.75
1.98
2.51
1.10
1.32
1.50
1.88
2.36
1.15
1.27
1.66
2.22
3.30
1.2
1.4
2.2
4.2
= 7 mA
= 7.0 mA
= 0.3 mA
= 1.0 mA
= 3.0 mA
OPT
AND MAXIMUM AVAILABLE GAIN
OPT
FORWARD INSERTION GAIN
0.2
21.86
15.82
11.87
(dB)
5.75
11.08
14.41
11.67
10.34
17.20
12.67
(dB)
G
5.63
6.45
5.03
9.97
8.33
5.26
7.04
5.60
9.50
7.45
4.62
Frequency, f (GHz)
G
vs. FREQUENCY
A
A
0.3
NE85633
MAG
0.20
0.22
0.49
0.63
MAG
0.73
0.78
0.79
0.58
0.62
0.63
0.71
0.37
0.44
0.48
0.56
0.60
0.21
0.32
0.46
0.57
0.65
|S21E|
0.5
Γ
Γ
OPT
2
OPT
V
I
0.7
C
CE
(T
(T
MAG
= 20 mA
ANG
-141
138
158
176
ANG
-150
-141
-118
= 10 V
A
A
128
149
134
152
176
143
169
177
113
177
-92
1.0
79
83
92
= 25°C)
= 25°C)
(T
A
= 25°C)
Rn/50
2.0
Rn/50
0.13
0.19
0.23
0.47
1.00
0.60
0.17
0.33
0.17
0.10
0.04
0.15
0.08
0.07
0.05
0.17
0.09
0.15
0.52
0.67
0.70
NE85619
TYPICAL NOISE PARAMETERS
V
V
V
V
V
FREQ.
(MHz)
CC
CE
CE
CE
CE
1000
1000
1500
1000
1500
2000
1000
1500
2000
2500
500
800
500
800
500
800
500
800
500
800
= 2.5 V, I
= 3 V, I
= 10 V, I
= 2.5 V, I
= 2.5 V, I
5
4
3
2
0
6
1
C
C
1
NF
C
= 5.0 mA
C
C
(dB)
1.73
2.20
1.15
1.50
1.90
1.00
1.22
1.35
1.70
1.07
1.21
1.34
1.69
2.17
1.10
1.24
1.37
1.72
2.20
2.75
= 7.0 mA
= 3.0 mA
= 1.0 mA
= 0.3 mA
V
f = 1 GHz
OPT
CE
vs. COLLECTOR CURRENT
= 10 V
2
Collector Current, I
3
11.26
14.83
11.81
10.46
16.48
13.06
11.56
18.42
14.90
13.34
10.39
(dB)
6.03
4.42
9.15
7.74
7.66
8.44
6.99
8.69
7.31
G
NOISE FIGURE
A
5
NE85635
7
10
MAG
0.74
0.74
0.60
0.58
0.60
0.43
0.40
0.46
0.64
0.30
0.31
0.37
0.46
0.52
0.27
0.28
0.32
0.42
0.47
0.54
Γ
20
OPT
C
(mA)
(T
NE856 SERIES
30
ANG
-150
-152
-134
A
113
117
136
122
143
174
129
149
171
123
143
172
73
75
80
87
83
= 25°C)
50 70 100
Rn/50
1.23
0.62
0.36
0.20
0.16
0.17
0.10
0.09
0.04
0.12
0.09
0.08
0.06
0.14
0.13
0.10
0.08
0.06
0.14
0.45