NE69039-T1-A CEL, NE69039-T1-A Datasheet - Page 2

• Manufacturer Part Number: NE69039-T1-A
• Description: TRANS NPN 1.9GHZ SOT-143
• Manufacturer: CEL

Specifications of NE69039-T1-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Gain: 5dB ~ 6dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 100mA, 3.6V
• Current - Collector (ic) (max): 300mA
• Mounting Type: Surface Mount
• Package / Case: SOT-143, SOT-143B, TO-253AA
• Dc Collector/base Gain Hfe Min: 30
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.3 A
• Power Dissipation: 0.2 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Note:
1. Operation in excess of any one of these parameters may result
APPLICATION
(1) TX Amplifier for DECT
(2) TX Amplifier for PHS
ABSOLUTE MAXIMUM RATINGS
+3 dBm
-14 dBm
TYPICAL DATA
f = 1.9 GHz, V
SYMBOLS
in permanent damage.
V
V
V
T
P
CBO
CEO
EBO
STG
I
T
C
T
j
DATA SUBJECT TO CHANGE WITHOUT NOTICE
P
η
I
G
30
25
20
15
10
C
5
C
1dB
L
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • [phone] • Telex 34-6393 • FAX [phone]
µPC2771T
EFFICIENCY, COLLECTOR CURRENT
NE68839
AND POWER GAIN VS. INPUT POWER
f = 1.9 GH
I
C
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
CC
= 1mA (Duty 1/8)
OUTPUT POWER, COLLECTOR
= 3.6 V, I
EXCLUSIVE NORTH AMERICAN AGENT FOR
5
PARAMETERS
Input Power, Pin (dBm)
Z
, V
CC
10
= 3.6V
CQ
27.5
72
27
6.7
NE68939
NE68939
Pout
= 1 mA, DUTY = 1/8
15
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
I
C
20
NE69039
NE69039
η
G
C
UNITS
dBm
%
mA
db
P
mW
mA
°C
°C
V
V
V
25
1
80
60
40
20
0
8
7
6
5
4
(T
-65 to +150
RATINGS
200 (CW)
A
= 25 °C)
300
150
Po = 27 dBm
P1 = 22 dBm
30
20
10
9.0
6.0
2.0
0
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
IMPEDANCE LOOKING INTO DEVICE
V
CC
FREQUENCY
= 3.6 V, I
Z
(GH
IN
1.9
0.9
ORDERING INFORMATION
Note:
1. Lead material: Cu
Z
)
-j10
CQ
PART NUMBER
NE69039-T1-A
0
j10
Lead plating: PbSn
1.9
RECOMMENDED P.C.B. LAYOUT
= 1 mA, CLASS AB
2
1
-j25
j25
Z
Z
IN
IN
(Ω Ω Ω Ω Ω ), Z
Z
OUT
OUTLINE 39
7.42+j14.2
4.0+j8.8
OUT
Z
(Ω Ω Ω Ω Ω )
-j50
IN
j50
2.4
(Ω Ω Ω Ω Ω ) DATA
1.0
QTY
3K/REEL
j100
-j100
3
4
15.8-j2.64
4.4-j4.6
Z
1.0
OUT
(Ω Ω Ω Ω Ω )
0
Z
07/06/2000
OUT