NE677M04-A CEL, NE677M04-A Datasheet - Page 4

• Manufacturer Part Number: NE677M04-A
• Description: TRANSISTOR NPN 1.8GHZ M04
• Manufacturer: CEL

Specifications of NE677M04-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 15GHz
• Noise Figure (db Typ @ F): 1.7dB ~ 2.5dB @ 2GHz
• Gain: 16dB
• Power - Max: 205mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 20mA, 3V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: M04
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.05 A
• Power Dissipation: 205 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NE677M04
TYPICAL PERFORMANCE CURVES
25
20
15
10
25
20
15
10
0
5
0
5
-15
-20
COLLECTOR CURRENT, COLLECTOR
COLLECTOR CURRENT, COLLECTOR
G
OUTPUT POWER, POWER GAIN,
G
OUTPUT POWER, POWER GAIN,
EFFICIENCY vs. INPUT POWER
EFFICIENCY vs. INPUT POWER
P
P
-15
-10
P
Input Power P
P
Input Power P
out
out
-10
-5
in
in
-5
0
V
f = 1.8 GHz
I
V
f = 0.9 GHz
I
cq
(dBm)
(dBm)
cq
CE
CE
= 8 mA (RF OFF)
= 8 mA (RF OFF)
η
η
= 3.2 V
= 3.2 V
c
c
5
0
I
I
c
c
10
5
250
200
150
100
50
0
250
200
150
100
50
0
(T
A
= 25 °C)
25
20
15
10
25
20
15
10
0
5
0
5
-15
-15
COLLECTOR CURRENT, COLLECTOR
COLLECTOR CURRENT, COLLECTOR
G
OUTPUT POWER, POWER GAIN,
OUTPUT POWER, POWER GAIN,
G
EFFICIENCY vs. INPUT POWER
EFFICIENCY vs. INPUT POWER
P
P
-10
-10
P
Input Power P
Input Power P
P
out
out
-5
-5
in
in
0
0
V
f = 2.4 GHz
I
V
f = 1.8 GHz
I
cq
(dBm)
(dBm)
cq
CE
CE
= 8 mA (RF OFF)
= 8 mA (RF OFF)
η
η
= 3.2 V
= 2.8 V
c
c
5
5
I
I
c
c
10
10
250
200
150
100
50
0
250
200
150
100
50
0