UPA801T-A CEL, UPA801T-A Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/1/129/cel_sml.jpg)
UPA801T-A
Manufacturer Part Number
UPA801T-A
Description
TRANSISTOR NPN HF 4.5GHZ SOT3
Manufacturer
CEL
Datasheet
1.UPA801T-T1-A.pdf
(8 pages)
Specifications of UPA801T-A
Transistor Type
2 NPN (Dual)
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
4.5GHz
Noise Figure (db Typ @ F)
1.2dB ~ 2.5dB @ 1GHz
Power - Max
200mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 7mA, 3V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Dc Collector/base Gain Hfe Min
70
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
3 V
Continuous Collector Current
0.1 A
Power Dissipation
100 mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
ABSOLUTE MAXIMUM RATINGS
Note: 1. Operation in excess of any one of these parameters may
TYPICAL PERFORMANCE CURVES
UPA801T
SYMBOLS
V
V
V
T
P
CBO
CEO
T
EBO
I
STG
C
result in permanent damage.
T
J
200
100
25
20
15
10
5
0
0
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage, V
TOTAL POWER DISSIPATION vs.
PARAMETERS
Ambient Temperature, T
COLLECTOR CURRENT vs.
AMBIENT TEMPERATURE
1 Die
2 Die
50
l
5
B
=160 µA
100
140 µA
120 µA
100 µA
80 µA
60 µA
40 µA
20 µA
UNITS
A
mW
mW
mA
(°C)
°C
°C
V
V
V
CE
(V)
1
150
10
(T
-65 to +150
RATINGS
A
(T
= 25°C)
100
110
200
150
20
12
3
A
= 25°C)
200
100
20
10
50
20
10
0
0.5
V
CE
Base to Emitter Voltage, V
BASE TO EMITTER VOLTAGE
= 3 V
COLLECTOR CURRENT vs.
1
COLLECTOR CURRENT
Collector Current, I
DC CURRENT GAIN vs.
0.5
5
10
C
(mA)
BE
V
CE
(V)
= 3 V
1.0
50