NESG2031M16-A CEL, NESG2031M16-A Datasheet - Page 5

• Manufacturer Part Number: NESG2031M16-A
• Description: TRANS NPN 2GHZ M16
• Manufacturer: CEL

Specifications of NESG2031M16-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 0.8dB ~ 1.3dB @ 2GHz ~ 5.2GHz
• Gain: 10dB ~ 17dB
• Power - Max: 175mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 130 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: M16
• Continuous Collector Current: 35 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Remark The graphs indicate nominal characteristics.
25
20
10
30
20
40
35
30
25
20
15
30
15
25
15
10
10
5
0
0.1
5
0
5
0
1
1
V
f = 2 GHz
V
f = 2 GHz
CE
CE
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
= 1 V,
= 3 V,
Collector Current I
Collector Current I
Frequency f (GHz)
1
MSG
|S
21e
|
2
10
10
MAG
MAG
C
C
10
(mA)
(mA)
V
I
C
CE
= 10 mA
MSG
Data Sheet PU10394EJ03V0DS
= 2 V,
100
100
100
30
25
20
10
40
25
20
10
15
35
30
25
20
15
10
35
30
15
5
0
0.1
5
5
0
0
0.1
1
V
f = 2 GHz
CE
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
= 2 V,
Collector Current I
Frequency f (GHz)
Frequency f (GHz)
1
1
MSG
MSG
|S
|S
21e
21e
|
2
|
10
2
NESG2031M16
MAG
MAG
MAG
C
10
10
(mA)
V
I
V
I
C
C
CE
CE
= 10 mA
= 10 mA
MSG
= 1 V,
= 3 V,
100
100
100
5