NE68518-A CEL, NE68518-A Datasheet - Page 4
![TRANSISTOR NPN 2GHZ SOT343](/photos/5/64/56472/sot-343_pkg_sml.jpg)
NE68518-A
Manufacturer Part Number
NE68518-A
Description
TRANSISTOR NPN 2GHZ SOT343
Manufacturer
CEL
Datasheet
1.NE68519-T1-A.pdf
(18 pages)
Specifications of NE68518-A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
6V
Frequency - Transition
12GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2.5dB @ 2GHz
Gain
8.5dB
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
75 @ 10mA, 3V
Current - Collector (ic) (max)
30mA
Mounting Type
Surface Mount
Package / Case
Surface Mount
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Power Dissipation
150 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NE685 SERIES
TYPICAL PERFORMANCE CURVES
180
200
100
100
200
180
0
3
5
4
2
0
1
0
0
0
1
V
f = 2 GHz
D.C. POWER DERATING CURVE
D.C. POWER DERATING CURVE
FREE AIR
CE
Ambient Temperature, T
Ambient Temperature, T
vs. COLLECTOR CURRENT
= 3 V
2
Collector Current, I
38.4
NE68533, NE68539
NE68518, NE68530
NOISE FIGURE
FREE AIR
50
50
5
INFINITE
HEAT SINK
INFINITE
HEAT SINK
10
100
100
C
(mA)
114
A
A
114
20
(C°)
(°C)
150
150
50
(TA = 25°C)
150
200
180
125
100
50
40
30
20
10
12
10
50
0
8
6
2
0
4
0
0
0.1
1
V
I
AND MAXIMUM AVAILABLE GAIN
C
V
f = 2 GHz
D.C. POWER DERATING CURVE
CE
= 10 mA
CE
FORWARD INSERTION GAIN
Ambient Temperature, T
= 3 V
= 3 V
0.2
FREE AIR
2
COLLECTOR CURRENT
Collector Current, I
INSERTION GAIN vs.
Frequency, f (GHz)
vs. FREQUENCY
50
NE68519
0.5
5
INFINITE
HEAT SINK
|S
1.0
10
21E
100
MAG
|
C
2
(mA)
A
114
2.0
20
(C°)
150
5.0
50