NE856M02-AZ CEL, NE856M02-AZ Datasheet

TRANSISTOR NPN 1GHZ SOT-89

NE856M02-AZ

Manufacturer Part Number
NE856M02-AZ
Description
TRANSISTOR NPN 1GHZ SOT-89
Manufacturer
CEL
Datasheet
1.NE856M02-T1-AZ.pdf (8 pages)

Specifications of NE856M02-AZ

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
6.5GHz
Noise Figure (db Typ @ F)
1.1dB ~ 3dB @ 1GHz
Power - Max
1.2W
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 20mA, 10V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
SOT-89
Dc Collector/base Gain Hfe Min
250
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
3 V
Continuous Collector Current
0.1 A
Power Dissipation
1.2 W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
FEATURES
• HIGH COLLECTOR CURRENT:
• NEW HIGH GAIN POWER MINI-MOLD PACKAGE
• HIGH OUTPUT POWER AT 1 dB COMPRESSION:
• HIGH IP
DESCRIPTION
ELECTRICAL CHARACTERISTICS
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
NEC's NE856M02 is an NPN silicon epitaxial bipolar transistor
designed for medium power applications requiring high dy-
namic range and low intermodulation distortion. This device
offers excellent performance and reliability at low cost through
NEC's titanium, platinum, gold metallization system and direct
nitride passivation of the surface of the chip. The NE856M02
is an excellent choice for low noise amplifiers in the VHF to UHF
band and is suitable for CATV and other telecommunication
applications.
SYMBOLS
|S
100 mA MAX
22 dBm TYP at 1 GHz
32 dBm TYP at 1 GHz
(SOT-89 TYPE)
C
h
I
I
NF
NF
CBO
EBO
21E
FE 2
f
RE 3
T
1
2
|
2
3
:
Collector Cutoff Current at V
Emitter Cutoff Current at V
DC Current Gain at V
Gain Bandwidth Product at V
Feed-back Capacitance at V
Insertion Power Gain at V
Noise Figure 1 at V
Noise Figure 2 at V
PARAMETERS AND CONDITIONS
EIAJ
TRANSISTOR HIGH FREQUENCY
1
PACKAGE OUTLINE
REGISTERED NUMBER
PART NUMBER
CE
CE
CE
LOW DISTORTION AMPLIFIER
= 10 V, I
= 10 V, I
= 10 V, I
CE
EB
CB
CB
= 10 V, I
CE
= 1 V, I
C
C
= 10 V, I
= 10 V, I
= 10 V, I
= 7 mA, f = 1 GHz
= 40 mA, f = 1 GHz
C
= 20 mA
NPN EPITAXIAL SILICON
C
C
= 0
= 20 mA, f = 1 GHz
E
(T
E
C
= 0
= 0, f = 1.0 MHz
A
= 20 mA
= 25°C)
UNITS
GHz
µA
µA
pF
dB
dB
dB
OUTLINE DIMENSIONS
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
0.42
±0.06
California Eastern Laboratories
MIN
50
BOTTOM VIEW
E
PACKAGE OUTLINE M02
1.5
1.6±0.2
4.5±0.1
3.0
C
B
0.45
±0.06
E
NE856M02
2SC5336
M02
TYP
12.0
120
6.5
0.5
1.1
1.8
0.42
±0.06
(Units in mm)
NE856M02
1.5±0.1
0.25±0.02
MAX
250
1.0
1.0
0.8
3.0

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NE856M02-AZ Summary of contents

Page 1

... NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. The NE856M02 is an excellent choice for low noise amplifiers in the VHF to UHF band and is suitable for CATV and other telecommunication applications ...

Page 2

... TH (J- 100 Ambient Temperature CURRENT GAIN vs. COLLECTOR CURRENT 200 100 0 Collector Current, Ic (mA) 1 ORDERING INFORMATION (T = 25°C) A UNITS RATINGS PART NUMBER V 20 NE856M02-T1- 3.0 mA 100 W 1.2 150 °C -65 to +150 ° 25°C) A 150 (° QUANTITY PACKAGING 1000 Tape & Reel FEED BACK CAPACITANCE vs. ...

Page 3

TYPICAL PERFORMANCE CURVES GAIN BAND WIDTH PRODUCT vs. COLLECTOR CURRENT 0 0 GHz Collector Current, Ic (mA) NOISE FIGURE vs. COLLECTOR CURRENT ...

Page 4

... TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz GHz - 0.1 GHz - NE856M02 FREQUENCY S 11 (GHz) MAG ANG 0.100 0.626 -67.5 0.200 0.535 -110.6 0.400 0.479 -149.7 0.600 0.465 -168.7 0.800 0.461 178.6 1.000 0.459 168.7 1.200 0.458 160.4 1.400 0.458 152.9 1.600 0.457 146 ...

Page 5

... TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 0.1 GHz 3 GHz - 0.1 GHz - NE856M02 FREQUENCY S 11 (GHz) MAG ANG 0.100 0.481 -88.5 0.200 0.434 -130.1 0.400 0.414 -162.4 0.600 0.411 -178.1 0.800 0.410 171.0 1.000 0.410 162.2 1.200 0.409 154.5 1.400 0.409 147.5 1 ...

Page 6

... NE856M02 TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 0.1 GHz 3 GHz - NE856M02 FREQUENCY S 11 (GHz) MAG ANG 0.100 0.508 -78.9 0.200 0.425 -120.5 0.400 0.384 -156.2 0.600 0.376 -173.7 0.800 0.374 174.4 1.000 0.374 164.9 1.200 0.375 156.8 1.400 0.375 149.5 1.600 ...

Page 7

... TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 0.1 GHz - GHz - NE856M02 FREQUENCY S 11 (GHz) MAG ANG 0.100 0.388 -113.0 0.200 0.380 -147.3 0.400 0.377 -172.1 0.600 0.378 175.4 0.800 0.379 166.1 1.000 0.380 158.2 1.200 0.381 151.2 1.400 0.382 144.7 1.600 0.381 138 ...

Page 8

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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