NESG210719-A CEL, NESG210719-A Datasheet - Page 2

• Manufacturer Part Number: NESG210719-A
• Description: TRANS NPN 2GHZ SC-90
• Manufacturer: CEL

Specifications of NESG210719-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 10GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.5dB @ 2GHz
• Gain: 6dB ~ 9dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 140 @ 5mA, 1V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: 3-XSOF, MiniMold
• Continuous Collector Current: 100 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (T
h
S-PARAMETERS
2
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Associated Gain
Reverse Transfer Capacitance
FE
Notes 1. Pulse measurement: PW ≤ 350
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/
h
Marking
CLASSIFICATION
FE
Rank
Value
2. Collector to base capacitance when the emitter grounded
Parameter
140 to 220
FB
D7
Symbol
S
S
h
C
FE
I
I
re
NF
G
CBO
EBO
f
f
21e
21e
Note 1
T
T
Note 2
a


2
2
µ
A
V
V
V
V
V
V
V
V
Z
V
Z
V
s, Duty Cycle ≤ 2%
Data Sheet PU10419EJ02V0DS
= +25°C)
S
S
CB
EB
CE
CE
CE
CE
CE
CE
CE
CB
= Z
= Z
= 0.5 V, I
= 5 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
opt
opt
E
C
C
C
C
C
C
C
E
Test Conditions
= 0 mA
= 0 mA, f = 1 MHz
= 5 mA
= 5 mA, f = 2 GHz
= 20 mA, f = 2 GHz
= 5 mA, f = 2 GHz
= 20 mA, f = 2 GHz
= 5 mA, f = 2 GHz,
= 5 mA, f = 2 GHz,
C
= 0 mA
MIN.
140
6.5
−
−
7
−
−
−
6
−
TYP.
180
0.9
0.5
10
12
−
−
8
9
9
NESG210719
MAX.
100
100
220
1.5
0.7
−
−
−
−
−
GHz
GHz
Unit
nA
nA
dB
dB
dB
dB
pF
−