NESG3031M14-A CEL, NESG3031M14-A Datasheet

TRANS NPN 5.8GHZ M14

NESG3031M14-A

Manufacturer Part Number
NESG3031M14-A
Description
TRANS NPN 5.8GHZ M14
Manufacturer
CEL
Datasheet

Specifications of NESG3031M14-A

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
4.3V
Noise Figure (db Typ @ F)
0.6dB ~ 1.5dB @ 2.4GHz ~ 5.8GHz
Gain
7.5dB ~ 16dB
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
220 @ 6mA, 2V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Package / Case
M14
Continuous Collector Current
35 mA
Emitter- Base Voltage Vebo
1.5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Power Dissipation
175 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
<R>
Document No. PU10415EJ04V0DS (4th edition)
Date Published December 2008 NS
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
• Maximum stable power gain: MSG = 15.0 dB TYP. @ V
• SiGe HBT technology (UHS3) adopted: f
• 4-pin lead-less minimold (M14, 1208 PKG)
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NESG3031M14
NESG3031M14-T3
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Remark To order evaluation samples, contact your nearby sales office.
Note Mounted on 1.08 cm
NF = 0.6 dB TYP., G
NF = 0.95 dB TYP., G
NF = 1.1 dB TYP., G
Part Number
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
Unit sample quantity is 50 pcs.
Parameter
NESG3031M14-A
NESG3031M14-T3-A
Order Number
a
a
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)
a
= 16.0 dB TYP. @ V
= 9.5 dB TYP. @ V
= 10.0 dB TYP. @ V
LOW NOISE, HIGH-GAIN AMPLIFICATION
2
× 1.0 mm (t) glass epoxy PWB
NPN SiGe RF TRANSISTOR FOR
Symbol
P
NPN SILICON GERMANIUM RF TRANSISTOR
V
V
V
tot
T
CBO
CEO
EBO
I
T
C
stg
The mark <R> shows major revised points.
Note
j
4-pin lead-less minimold
(M14, 1208 PKG)
(Pb-Free)
A
max
CE
= +25°C)
CE
CE
= 110 GHz
= 2 V, I
= 2 V, I
Package
= 2 V, I
−65 to +150
C
Ratings
C
= 6 mA, f = 5.8 GHz
12.0
C
150
150
4.3
1.5
= 6 mA, f = 2.4 GHz
35
CE
= 6 mA, f = 5.2 GHz
= 3 V, I
50 pcs (Non reel)
10 kpcs/reel
C
= 20 mA, f = 5.8 GHz
Quantity
NESG3031M14
Unit
mW
mA
°C
°C
V
V
V
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 4 (Emitter) face
the perforation side of the tape
Supplying Form
2003, 2008

Related parts for NESG3031M14-A

NESG3031M14-A Summary of contents

Page 1

... SiGe HBT technology (UHS3) adopted: f • 4-pin lead-less minimold (M14, 1208 PKG) <R> ORDERING INFORMATION Part Number Order Number NESG3031M14 NESG3031M14-A NESG3031M14-T3 NESG3031M14-T3-A Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (T Parameter ...

Page 2

... CE C (set 5.8 GHz Sopt L Lopt mA (set 5.8 GHz Sopt L Lopt μ s, Duty Cycle ≤ 2% Data Sheet PU10415EJ04V0DS NESG3031M14 MIN. TYP. MAX. Unit − − 100 nA − − 100 nA − 220 300 380 − 6.5 9.0 dB − − 0.6 dB − − ...

Page 3

... BE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 0.9 1.0 0 (V) BE Data Sheet PU10415EJ04V0DS NESG3031M14 MHz Collector to Base Voltage V (V) CB 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage V (V) BE μ μ 200 A 180 A μ ...

Page 4

... Remark The graphs indicate nominal characteristics CURRENT GAIN vs. COLLECTOR CURRENT 1 000 100 10 100 0.1 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz 100 1 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz 100 Data Sheet PU10415EJ04V0DS NESG3031M14 100 Collector Current I (mA 100 Collector Current I (mA 100 Collector Current I (mA) C ...

Page 5

... INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 100 1 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 100 1 Data Sheet PU10415EJ04V0DS NESG3031M14 MAG MAG MSG 21e 10 100 Frequency f (GHz 2.4 GHz MSG MAG 21e 10 100 Collector Current I (mA 2.4 GHz MSG MAG ...

Page 6

... INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 5.2 GHz –5 100 1 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 5.8 GHz –5 100 1 Data Sheet PU10415EJ04V0DS NESG3031M14 5.2 GHz MSG MAG 21e 10 100 Collector Current I (mA 5.8 GHz MSG MAG 21e 10 100 Collector Current I (mA) C ...

Page 7

... C Remark The graphs indicate nominal characteristics. OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 5.8 GHz (set –5 –15 –10 –5 5 Input Power P NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 100 1 Collector Current I Data Sheet PU10415EJ04V0DS NESG3031M14 out (dBm 5.8 GHz 0 10 100 (mA ...

Page 8

... S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.necel.com/microwave/en/ 8 Data Sheet PU10415EJ04V0DS NESG3031M14 ...

Page 9

... PACKAGE DIMENSIONS 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) (UNIT: mm) (Top View) 1.0±0.05 +0.07 0.8 –0.05 0.1 0.2 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter Data Sheet PU10415EJ04V0DS NESG3031M14 (Bottom View) 0.6 9 ...

Page 10

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). NESG3031M14 M8E 02. 11-1 ...

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