UPA862TD-A CEL, UPA862TD-A Datasheet - Page 4

• Manufacturer Part Number: UPA862TD-A
• Description: TRANSISTOR NPN DUAL TD
• Manufacturer: CEL

Specifications of UPA862TD-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 6V, 5.5V
• Frequency - Transition: 12GHz, 6.5GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.5dB @ 2GHz
• Power - Max: 210mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 10mA, 3V / 100 @ 5mA, 1V
• Current - Collector (ic) (max): 30mA, 100mA
• Mounting Type: Surface Mount
• Package / Case: TD
• Dc Collector/base Gain Hfe Min: 150
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
UPA862TD
1000
1000
100
100
10
14
12
10
10
8
6
4
2
0
0.1
0.1
0.1
V
f = 2 GHz
CE
GAIN BANDWIDTH PRODUCT
= 2 V
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
Collector Current, I
Collector Current, I
Collector Current, I
DC CURRENT GAIN
DC CURRENT GAIN
1
1
1
Q1
10
10
C
10
C
C
(mA)
(mA)
(mA)
V
V
CE
CE
= 1 V
= 2 V
100
100
100
(T
A
= 25°C)
1000
1000
100
100
10
10
10
0.1
8
6
4
2
0
0.1
1
V
f = 2 GHz
CE
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
= 2 V
vs. COLLECTOR CURRENT
Collector Current, I
Collector Current, I
Collector Current, I
DC CURRENT GAIN
DC CURRENT GAIN
1
1
Q2
10
10
10
C
C
C
(mA)
(mA)
(mA)
V
V
CE
CE
= 1 V
= 2 V
100
100
100