MMBTH10LT3G ON Semiconductor, MMBTH10LT3G Datasheet - Page 2
MMBTH10LT3G
Manufacturer Part Number
MMBTH10LT3G
Description
TRANS VHF/UHF NPN 25V SOT23
Manufacturer
ON Semiconductor
Datasheet
1.MMBTH10LT1G.pdf
(5 pages)
Specifications of MMBTH10LT3G
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
25V
Frequency - Transition
650MHz
Power - Max
225mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 4mA, 10V
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector (ic) (max)
-
Gain
-
Noise Figure (db Typ @ F)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBTH10LT3G
Manufacturer:
ON
Quantity:
30 000
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector−Emitter Breakdown Voltage
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter On Voltage
Current−Gain − Bandwidth Product
Collector−Base Capacitance
Common−Base Feedback Capacitance
Collector Base Time Constant
(I
(I
(I
(V
(V
(I
(I
(I
(I
(V
(V
(I
C
C
E
C
C
C
C
C
CB
EB
CB
CB
= 4.0 mAdc, V
= 10 μAdc, I
= 4.0 mAdc, V
= 4.0 mAdc, I
= 4.0 mAdc, V
= 4.0 mAdc, V
= 1.0 mAdc, I
= 100 μAdc, I
= 10 Vdc, I
= 10 Vdc, I
= 25 Vdc, I
= 2.0 Vdc, I
C
E
E
E
B
C
B
E
CB
= 0)
CE
CE
CE
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= 0)
= 0.4 mAdc)
= 0)
= 0)
= 0)
= 10 Vdc, f = 31.8 MHz)
= 10 Vdc)
= 10 Vdc)
= 10 Vdc, f = 100 MHz)
Characteristic
(T
A
= 25°C unless otherwise noted)
MMBTH10−4LT1
MMBTH10−4LT1
MMBTH10LT1
MMBTH10LT1
http://onsemi.com
2
V
V
V
Symbol
V
(BR)CEO
(BR)CBO
(BR)EBO
rb′C
I
CE(sat)
I
V
CBO
h
C
EBO
C
f
FE
BE
T
cb
rb
c
Min
120
650
800
3.0
25
30
60
−
−
−
−
−
−
−
Typ
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.95
0.65
100
100
240
0.5
0.7
9.0
−
−
−
−
−
−
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
pF
ps
−