MMBTH10-4LT1G ON Semiconductor, MMBTH10-4LT1G Datasheet
MMBTH10-4LT1G
Specifications of MMBTH10-4LT1G
MMBTH10-4LT1GOSTR
Available stocks
Related parts for MMBTH10-4LT1G
MMBTH10-4LT1G Summary of contents
Page 1
... MMBTH10LT1G, MMBTH10-4LT1G VHF/UHF Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation FR−5 Board (Note 25°C A Derate above 25°C ...
Page 2
... Vdc 31.8 MHz 25°C unless otherwise noted) A Symbol V (BR)CEO V (BR)CBO V (BR)EBO I CBO I EBO h FE MMBTH10LT1 MMBTH10−4LT1 V CE(sat MMBTH10LT1 MMBTH10−4LT1 rb′C c http://onsemi.com 2 Min Typ Max Unit 25 − − Vdc 30 − − Vdc 3.0 − − Vdc − − 100 nAdc − ...
Page 3
COMMON−BASE y PARAMETERS versus FREQUENCY ( 100 200 300 400 f, FREQUENCY (MHz) Figure 1. Rectangular Form ...
Page 4
COMMON−BASE y PARAMETERS versus FREQUENCY ( 5.0 4.0 3 2.0 1.0 0 100 200 300 400 f, FREQUENCY (MHz) Figure 5. Rectangular Form 10 9.0 8.0 7.0 6.0 5 4.0 3.0 2.0 1.0 0 ...
Page 5
... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBTH10LT1/D ...