NE85639R-T1 CEL, NE85639R-T1 Datasheet - Page 2
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NE85639R-T1
Manufacturer Part Number
NE85639R-T1
Description
TRANS NPN 1GHZ SOT-143R
Manufacturer
CEL
Datasheet
1.NE85619-T1-A.pdf
(26 pages)
Specifications of NE85639R-T1
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2.1dB @ 1GHz
Gain
13.5dB
Power - Max
200mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 20mA, 10V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
SOT-143R
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
2SC4093R-T1
NE85639R-T1TR
NE85639R-TR
NE85639RTR
NE85639R-T1TR
NE85639R-TR
NE85639RTR
ELECTRICAL CHARACTERISTICS
Notes:
1. Electronic Industrial Association of Japan.
2. Pulse width ≤ 350 μs, duty cycle ≤ 2% pulsed.
3. C
4. With 2.5 cm
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
ELECTRICAL CHARACTERISTICS
R
SYMBOLS
|S
TH (J-A)
I
I
R
guard circuit. The emitter terminal shall be connected to the guard terminal.
h
NF
CBO
EBO
C
|S
G
21E
P
f
FE
TH (J-A)
re
I
I
T
re
T
h
A
NF
G
CBO
EBO
C
21E
P
f
FE
T
measurement employs a three terminal capacitance bridge incorporating a
|
re
A
T
2
|
2
Gain Bandwidth Product at
V
V
Noise Figure at
V
V
Associated Gain at
V
Insertion Power Gain at
V
Forward Current Gain
V
V
Collector Cutoff Current
at V
Emitter Cutoff Current
at V
Feedback Capacitance
V
V
Total Power Dissipation
Thermal Resistance (J-A)
CE
CE
CE
CE
CE
CE
CE
CE
CB
CB
2
PARAMETERS AND CONDITIONS
Gain Bandwidth Product at
V
Noise Figure at
V
Associated Gain at
V
Insertion Power Gain at
V
Forward Current Gain
V
Collector Cutoff Current
at V
Emitter Cutoff Current
at V
Feedback Capacitance
V
Total Power Dissipation
Thermal Resistance (J to A)
EIAJ
x 0.7 mm ceramic substrate (infinite heatsink).
EIAJ
CB
EB
CE
CE
CE
CE
CE
CB
= 10 V, I
= 3 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 3 V, I
= 3 V, I
= 10 V, I
CB
EB
= 1 V, I
= 15 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
1
PACKAGE OUTLINE
1
PACKAGE OUTLINE
REGISTERED NUMBER
= 15 V, I
= 1 V, I
REGISTERED NUMBER
PART NUMBER
PART NUMBER
C
C
E
C
C
C
C
C
C
E
= 7 mA
= 7 mA
= 0 mA, f = 1 MHz
C
= 0 mA, f = 1 MHz
= 20 mA
= 7 mA, f = 1 GHz
= 7 mA, f = 2 GHz
= 7 mA, f = 1 GHz
= 20 mA, f = 1 GHz
= 20 mA
E
C
C
C
C
C
E
= 0 mA
C
= 0 mA
= 0 mA, f = 1 MHz
= 20 mA
= 7 mA, f = 1 GHz
= 7 mA, f = 1 GHz
= 20 mA, f = 1 GHz
= 20 mA
E
= 0 mA
= 0
2
f = 2 GHz
3
at
2
at
f = 2 GHz
3
at
f = 2 GHz
f = 2 GHz
mA
at
f = 2 GHz
(T
(T
A
A
= 25°C)
= 25°C)
°C/W
GHz
GHz
mW
dB
dB
dB
dB
dB
dB
μA
μA
pF
pF
UNITS
°C/W
GHz
mW
dB
dB
dB
dB
dB
dB
μA
μA
pF
50 120 300
7
00 (CHIP)
NE85600
7.0
1.1
2.1
0.5
10
9
MIN
50
700
NE85633
2SC3356
1.0
1.0
1.0
TYP MAX MIN
11.5
0.55
120
7.0
1.4
33
9
11
50
NE85618
2SC5011
300
200
625
2.0
1.0
1.0
1.0
120 300
6.5
1.4
2.1
0.5
18
13
13
7
7
50
150
833
1.0
1.0
0.9
NE85634
2SC3357
TYP MAX MIN TYP MAX MIN
0.65
120
6.5
1.4
9.5
34
3.0
80
NE85619
2SC5006
2000
62.5
12.5
120 160
300
4.5
1.4
2.2
6.5
0.7
1.0
1.0
1.0
19
12
4
4
1000
100
1.0
1.0
1.5
50
7
NE85635
2SC3603
40
120
7.0
2.1
0.5
35
10
9
NE85630
2SC4226
110 250
4.5
1.3
2.2
0.7
30
12
12
6
6
300
580
590
3.4
1.0
1.0
1.0
NE856 SERIES
150
833
1.0
1.0
1.5
50
NE85639/39R
50
2SC4093
NE85632
2SC3355
TYP MAX
13.5
120
9.0
1.5
8.5
0.5
39
13
0.65 1.0
7
120 300
6.5
1.4
9.5
32
10
300
200
500
2.1
1.0
1.0
0.9
600
210
1.0
1.0