NE68139R-T1-A CEL, NE68139R-T1-A Datasheet - Page 19
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NE68139R-T1-A
Manufacturer Part Number
NE68139R-T1-A
Description
TRANSISTOR NPN 1GHZ SOT-143R
Manufacturer
CEL
Specifications of NE68139R-T1-A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.2dB ~ 2dB @ 1GHz
Gain
13.5dB
Power - Max
200mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 7mA, 3V
Current - Collector (ic) (max)
65mA
Mounting Type
Surface Mount
Package / Case
SOT-143R
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.065 A
Power Dissipation
0.2 W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NE68139R-ATR
OUTLINE DIMENSIONS
2.9 ± 0.2 0.95
2.9 ± 0.2 0.95
1.1
1.1 to 1.4
0.5±0.06
C
+0.2
0.1
-0.1
1.9
0.85
+0.06
-0.04
0.6
0.8
0.8
PACKAGE OUTLINE 33
PACKAGE OUTLINE 35
PACKAGE OUTLINE 39
+0.10
-0.05
5˚
2.55±0.2
2
1
φ2.1
2
1
(MICRO-X)
(SOT-23)
2.8
E
E
1.5
2.8
1.5
(Units in mm)
+0.2
-0.3
+0.2
-0.1
0 to 0.1
ALL LEADS
+0.2
+0.2
0 to 0.1
-0.3
-0.1
3.8 MIN
45˚
3
3
4
B
5˚
0.55
0.16
(LEADS 2, 3, 4)
1.8 MAX
0.4
0.16 +0.10
0.65
(ALL LEADS)
0.4
+0.10
-0.06
+0.10
-0.05
1.9
+0.10
-0.06
+0.10
-0.05
-0.15
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
PIN CONNECTIONS
1.Collector
2. Emitter
3. Base
4. Emitter
PIN CONNECTIONS
1.Collector
2. Emitter
3. Base
4. Emitter
0.8
1.9
RECOMMENDED P.C.B. LAYOUT
RECOMMENDED P.C.B. LAYOUT
1
2
2
1
PACKAGE OUTLINE 33
PACKAGE OUTLINE 39
1.0
2.4
2.4
1.0
3
NE681 SERIES
0.95
3
4
1.0
1.9