NE681M13-A CEL, NE681M13-A Datasheet - Page 2

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NE681M13-A

Manufacturer Part Number
NE681M13-A
Description
TRANSISTOR NPN 1GHZ M13
Manufacturer
CEL
Datasheet

Specifications of NE681M13-A

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
7GHz
Noise Figure (db Typ @ F)
1.4dB ~ 2.7dB @ 1GHz
Power - Max
140mW
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 7mA, 3V
Current - Collector (ic) (max)
65mA
Mounting Type
Surface Mount
Package / Case
Surface Mount
Dc Collector/base Gain Hfe Min
80
Dc Current Gain Hfe Max
145
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
0.065 A
Power Dissipation
140 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
ABSOLUTE MAXIMUM RATINGS
TYPICAL PERFORMANCE CURVES
Notes:
1. Operation in excess of any one of these parameters may result
2. With device mounted on 1.08 cm
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
SYMBOLS
in permanent damage.
V
V
V
T
P
CBO
CEO
EBO
T
STG
I
C
T 2
J
DATA SUBJECT TO CHANGE WITHOUT NOTICE
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
65
55
45
35
25
15
5
0
COLLECTOR TO EMITTER VOLTAGE
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Collector to Emitter Voltage, V
EXCLUSIVE NORTH AMERICAN AGENT FOR
PARAMETERS
COLLECTOR CURRENT vs.
2
4
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
2
X 1.2 mm glass epoxy board.
6
UNITS
mW
mA
8
°C
°C
CE
V
V
V
(V)
1
10
(T
-65 to +150
RATINGS
A
(T
= 25°C)
140
150
1.5
20
10
65
A
= 25°C)
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
ORDERING INFORMATION
NE681M13-T3-A
PART NUMBER
NE681M13-A
500
300
100
200
70
50
30
20
10
1
FORWARD CURRENT GAIN vs.
QUANTITY
COLLECTOR CURRENT
Collector Current, I
2
3
5
7
10
C
(mA)
V
20
CE
= 8 V
30
2/09/2000
50

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