NE687M33-A CEL, NE687M33-A Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/1/129/cel_sml.jpg)
NE687M33-A
Manufacturer Part Number
NE687M33-A
Description
TRANSISTOR NPN 2GHZ M33
Manufacturer
CEL
Datasheet
1.NE687M33-T3-A.pdf
(6 pages)
Specifications of NE687M33-A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
3V
Frequency - Transition
12GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2dB @ 2GHz
Power - Max
90mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 10mA, 1V
Current - Collector (ic) (max)
30mA
Mounting Type
Surface Mount
Package / Case
Surface Mount
Configuration
Single
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NE687M33
TYPICAL CHARACTERISTICS
(T
=+25ºC, unless otherwise specified)
A
DC CURRENT GAIN vs.
DC CURRENT GAIN vs.
COLLECTOR CURRENT
COLLECTOR CURRENT
1000
1000
V
= 1 V
V
= 2 V
CE
CE
100
100
10
10
0.1
1
10
100
0.1
1
10
100
Collector Current I
(mA)
Collector Current I
(mA)
C
C
Remark The graphs indicate nominal characteristics.