NE851M03-A CEL, NE851M03-A Datasheet - Page 4

• Manufacturer Part Number: NE851M03-A
• Description: TRANSISTOR NPN 2GHZ SOT-363
• Manufacturer: CEL

Specifications of NE851M03-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Frequency - Transition: 4.5GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 2.5dB @ 2GHz
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 1V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 145
• Mounting Style: SMD/SMT
• Configuration: Single
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 0.2 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
-10
10
20
15
10
15
10
-5
-5
5
0
5
0
5
0
1
1
1
V
f = 2 GHz
INSERTION POWER GAIN, MAG, MSG
V
f = 4 GHz
CE
INSERTION POWER GAIN and MAG
CE
MSG vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG,
= 1 V
= 1 V
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
Collector Current, I
Collector Current, I
Collector Current, I
MSG
MAG
10
10
10
|S
|S
|S
MAG
21e
21e
21e
|
|
|
2
2
2
C
C
C
(mA)
(mA)
(mA)
V
f = 1 GHz
CE
MSG
= 1 V
100
100
100
MAG
(T
A
= 25°C)
-10
20
15
10
10
15
10
-5
-5
5
0
5
0
5
0
1
1
1
INSERTION POWER GAIN, MAG, MSG
V
f = 2 GHz
V
f = 4 GHz
INSERTION POWER GAIN, MSG vs.
INSERTION POWER GAIN and MAG
CE
CE
= 2 V
= 2 V
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
Collector Current, I
Collector Current, I
COLLECTOR CURRENT
Collector Current, I
MSG
MAG
10
10
10
|S
|S
|S
MSG
MAG
21e
21e
21e
|
|
|
2
2
2
C
C
C
(mA)
(mA)
(mA)
V
f = 1 GHz
CE
= 2 V
100
100
100