NE851M33-A CEL, NE851M33-A Datasheet - Page 2

• Manufacturer Part Number: NE851M33-A
• Description: TRANSISTOR NPN 2GHZ M33
• Manufacturer: CEL

Specifications of NE851M33-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Frequency - Transition: 4.5GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 2.5dB @ 2GHz
• Power - Max: 130mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 1V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: M33
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 145
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 130 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
h
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Reverse Transfer Capacitance
FE
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
h
Marking
FE
RANK
CLASSIFICATION
Value
2. Collector to base capacitance when the emitter grounded
PARAMETER
100 to 145
FB
E7
SYMBOL
h
C
|S
|S
FE
re
I
I
NF
CBO
EBO
f
f
21e
21e
Note 2
Note 1
T
T
|
|
2
2
V
V
V
V
V
V
V
V
Z
V
(T
CB
EB
CE
CE
CE
CE
CE
CE
S
CB
= Z
A
= 1 V, I
= 5 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 0.5 V, I
=+25ºC)
opt
TEST CONDITIONS
C
E
C
C
C
C
C
C
= 0 mA
= 0 mA
= 5 mA
= 5 mA, f = 2 GHz
= 15 mA, f = 2 GHz
= 5 mA, f = 2 GHz
= 15 mA, f = 2 GHz
= 10 mA, f = 2 GHz,
C
= 0 mA, f = 1 MHz
MIN.
100
3.0
5.0
3.0
4.5
–
–
–
–
TYP.
120
4.5
6.5
4.0
5.5
1.9
0.6
–
–
MAX.
600
600
145
2.5
0.8
–
–
–
–
UNIT
GHz
GHz
nA
nA
dB
dB
dB
pF
–