BLS3135-50,114 NXP Semiconductors, BLS3135-50,114 Datasheet

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BLS3135-50,114

Manufacturer Part Number
BLS3135-50,114
Description
TRANSISTOR RF POWER SOT422A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLS3135-50,114

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
75V
Frequency - Transition
3.5GHz
Gain
8dB
Power - Max
80W
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 1.5A, 5V
Current - Collector (ic) (max)
6A
Mounting Type
Surface Mount
Package / Case
SOT-422A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure (db Typ @ F)
-
Other names
934055198114
BLS3135-50 TRAY
BLS3135-50 TRAY
Product specification
Supersedes data of 1999 Aug 16
book, halfpage
DATA SHEET
BLS3135-50
Microwave power transistor
M3D259
DISCRETE SEMICONDUCTORS
2003 Apr 15

Related parts for BLS3135-50,114

BLS3135-50,114 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D259 BLS3135-50 Microwave power transistor Product specification Supersedes data of 1999 Aug 16 2003 Apr 15 ...

Page 2

... After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 2003 Apr 15 PINNING - SOT422A handbook, halfpage (GHz) (V) 3.1 to 3.5 40 WARNING 2 Product specification BLS3135-50 PIN DESCRIPTION 1 collector 2 emitter 3 base; connected to flange MBK051 Fig.1 Simplified outline. ...

Page 3

... open collector t 100 100 0.2 mm from ceramic cap PARAMETER CONDITIONS mA; open emitter (GHz) (V) 3 Product specification BLS3135-50 MIN. 10 CONDITIONS t = 100 s; = 10%; note 300 s; = 10%; note 1 p MIN (W) (dB typ. 55 typ. 8 MAX. UNIT +200 C 200 C 235 C ...

Page 4

... Philips Semiconductors Microwave power transistor Typical impedance FREQUENCY (GHZ) 3.1 3.2 3.3 3.4 3.5 2003 Apr 23.5 j 5.6 23.6 j 4.3 23.8 j 2.9 24.3 j 1.6 24.9 j 0.3 4 Product specification BLS3135- 7.8 j 3.7 7.3 j 4.1 6.6 j 4.3 5.8 j 4.2 5.1 j 4.1 ...

Page 5

... GHz. Fig.4 Collector efficiency as a function of load power; typical values. 2003 Apr 15 MCD758 handbook, halfpage (1) ( ( 3.5 GHz. ( 3.3 GHz. ( 3.1 GHz. MCD760 handbook, halfpage ( BLS3135- (dB) (2) ( class- 100 Fig.3 Power gain as a function of load power; typical values. ...

Page 6

... The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric ( The other side is unetched and serves as a ground plane ATC 100A 5.1 pF Fig.6 Component layout for 3.1 to 3.5 GHz class-C test circuit. 2003 Apr Product specification BLS3135- output C2 MCD762 = 2.2), thickness 0.38 mm. ...

Page 7

... REFERENCES JEDEC EIAJ 7 Product specification BLS3135- 4.52 3.43 3.35 22.99 9.91 16.51 3.74 3.18 22.73 9.65 2.92 0.135 ...

Page 8

... Product specification BLS3135-50 DEFINITION These products are not Philips Semiconductors ...

Page 9

... Philips Semiconductors Microwave power transistor 2003 Apr 15 NOTES 9 Product specification BLS3135-50 ...

Page 10

... Philips Semiconductors Microwave power transistor 2003 Apr 15 NOTES 10 Product specification BLS3135-50 ...

Page 11

... Philips Semiconductors Microwave power transistor 2003 Apr 15 NOTES 11 Product specification BLS3135-50 ...

Page 12

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...

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