MBC13900NT1 Freescale Semiconductor, MBC13900NT1 Datasheet - Page 3
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MBC13900NT1
Manufacturer Part Number
MBC13900NT1
Description
TRANS RF NPN LO NOISE SOT-343
Manufacturer
Freescale Semiconductor
Datasheet
1.MBC13900T1.pdf
(24 pages)
Specifications of MBC13900NT1
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
6.5V
Frequency - Transition
15GHz
Noise Figure (db Typ @ F)
0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz
Gain
15dB ~ 22dB
Power - Max
188mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 5mA, 2V
Current - Collector (ic) (max)
20mA
Mounting Type
Surface Mount
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBC13900NT1
Manufacturer:
ON/安森美
Quantity:
20 000
Freescale Semiconductor
Thermal Resistance, Junction-to-Case
Note: To calculate the junction temperature use T
OFF Characteristic
Collector-Emitter Breakdown Voltage (I
Collector-Base Breakdown Voltage (I
Emitter-Base Breakdown Voltage (I
Collector Cutoff Current (V
Emitter Cutoff Current (V
Base Cutoff Current (V
ON Characteristic
DC Current Gain (V
Dynamic Characteristics
Current Gain Bandwidth Product
Performance Characteristic
Insertion Gain
Maximum Stable Gain and/or Maximum Available Gain
[Note 2]
Minimum Noise Figure
Associated Gain at Minimum Noise Figure
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
lead adjacent to the package body.
= 2.0 V, I
= 2.0 V, I
= 2.0 V, I
= 3.0 V, I
= 3.0 V, I
= 2.0 V, I
= 2.0 V, I
= 3.0 V, I
= 3.0 V, I
= 2.0 V, I
= 2.0 V, I
= 3.0 V, I
= 3.0 V, I
= 2.0 V, I
= 2.0 V, I
= 3.0 V, I
= 3.0 V, I
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
= 15 mA, f = 0.9 GHz)
= 5.0 mA, f = 0.9 GHz)
= 5.0 mA, f = 1.9 GHz)
= 3.0 mA, f = 0.9 GHz)
= 3.0 mA, f = 1.9 GHz)
= 5.0 mA, f = 0.9 GHz)
= 5.0 mA, f = 1.9 GHz)
= 3.0 mA, f = 0.9 GHz)
= 3.0 mA, f = 1.9 GHz)
= 5.0 mA, f = 0.9 GHz)
= 5.0 mA, f = 1.9 GHz)
= 3.0 mA, f = 0.9 GHz)
= 3.0 mA, f = 1.9 GHz)
= 5.0 mA, f = 0.9 GHz)
= 5.0 mA, f = 1.9 GHz)
= 3.0 mA, f = 0.9 GHz)
= 3.0 mA, f = 1.9 GHz)
1
CE
1
Characteristic
CE
= 2.0 V, I
Characteristic
EB
= 5.0 V, I
CB
= 2.0 V, I
= 7.0 V, I
C
= 5.0 mA)
B
E
C
= 0)
C
= 0.1 mA, I
Table 4. Electrical Characteristics
E
= 0)
C
= 0.1 mA, I
MBC13900 Technical Data, Rev. 1.1
Table 3. Thermal Characteristic
= 0)
= 0.1 mA, I
C
J
E
= 0)
= (P
B
= 0)
= 0)
D
x R
MSG, MAG
θJC
V
V
V
Symbol
(BR)CEO
(BR)CBO
(BR)EBO
|S
NF
I
I
I
G
) + T
h
CBO
EBO
CEO
f
21
FE
NF
τ
min
|
2
C
. The case temperature measured on collector
Symbol
R
θJC
18.5
13.5
16.5
12.5
17.5
Min
100
6.5
8.0
3.0
22
18
21
-
-
-
-
-
-
-
-
-
-
-
-
19.5
14.5
17.5
13.5
18.5
Typ
7.5
4.0
0.8
0.9
0.8
0.9
12
15
23
19
22
22
16
21
15
-
-
-
-
Max
400
Electrical Specifications
Max
200
0.1
0.1
0.1
0.9
1.1
0.9
1.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
°C/W
Unit
GHz
Unit
Vdc
Vdc
Vdc
µA
µA
µA
dB
dB
dB
dB
-
3