HSG1002VE-TL-E Renesas Electronics America, HSG1002VE-TL-E Datasheet - Page 37

• Manufacturer Part Number: HSG1002VE-TL-E
• Description: IC AMP HBT SIGE 38GHZ MFPAK-4
• Manufacturer: Renesas Electronics America

Specifications of HSG1002VE-TL-E

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.5V
• Frequency - Transition: 38GHz
• Noise Figure (db Typ @ F): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
• Gain: 8dB ~ 19.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: 4-MFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HSG1002
Rev.1.00, Apr.12.2004, page 35 of 37
14
14
10
10
-10
-10
-15
-15
-20
-20
-25
-25
-30
-30
5
0
15
15
10
10
-5 -5
5
0
1
0
@VCE=2V
@VCE=2V
f=5.8GHz
f=5.8GHz
PG
PG
NF
NF
2
RLin
RLin
RLout
RLout
|S21|
|S21|
2
RLin, Rlout, |S21|
RLin, Rlout, |S21|
4
IC (mA)
IC (mA)
PG, NF-IC
PG, NF-IC
f (GHz)
f (GHz)
10
2
VS f
VS f
6
@VCE=2V
@VCE=2V
8
IC=10mA
IC=10mA
100
100
10
10