MSD2714AT1G ON Semiconductor, MSD2714AT1G Datasheet - Page 3

• Manufacturer Part Number: MSD2714AT1G
• Description: TRANS NPN VHF/UHF BIPO 25V SC-59
• Manufacturer: ON Semiconductor

Specifications of MSD2714AT1G

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 25V
• Frequency - Transition: 650MHz
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 1mA, 6V
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector (ic) (max): -
• Gain: -
• Noise Figure (db Typ @ F): -

−10
−20
−30
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
5.0
4.0
3.0
2.0
1.0
10
70
60
50
40
30
20
10
0
0
0
100
100
100
Figure 3. Rectangular Form
Figure 5. Rectangular Form
Figure 7. Rectangular Form
200
200
200
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
−g
fb
300
300
300
COMMON−BASE y PARAMETERS versus FREQUENCY
400
400
400
−b
b
ob
rb
y
y
(V
fb
rb
500
MPS H11
500
, FORWARD TRANSFER ADMITTANCE
500
b
CB
, REVERSE TRANSFER ADMITTANCE
MPS H10
fb
TYPICAL CHARACTERISTICS
= 10 Vdc, I
−g
g
y
ob
rb
ob
700
700
700
, OUTPUT ADMITTANCE
http://onsemi.com
−b
MSD2714AT1
rb
C
1000
1000
1000
= 4.0 mAdc, T
3
−1.0
−2.0
−3.0
−4.0
−5.0
8.0
6.0
4.0
2.0
60
50
40
30
20
10
10
−2.0
0
0
70
0
100
100
200
400
−1.8
A
60
= 25°C)
700
200
−1.2
2.0
50
1000 MHz
−0.8
Figure 4. Polar Form
Figure 6. Polar Form
Figure 8. Polar Form
40
−0.4
30
4.0
400
g
g
g
rb
ob
fb
(mmhos)
(mmhos)
(mmhos)
20
0
1000 MHz
100
200
400
700
0.4
10
6.0
600
0.8
0
700
−10
1.2
8.0
1000 MHz
−20 −30
1.6
2.0
10