MCR106-8G ON Semiconductor, MCR106-8G Datasheet - Page 3

• Manufacturer Part Number: MCR106-8G
• Description: THYRISTOR SCR 4A 600V TO225AA
• Manufacturer: ON Semiconductor
• Type: SCRr

Specifications of MCR106-8G

• Scr Type: Sensitive Gate
• Voltage - Off State: 600V
• Voltage - Gate Trigger (vgt) (max): 1V
• Voltage - On State (vtm) (max): 2V
• Current - On State (it (av)) (max): 2.55A
• Current - On State (it (rms)) (max): 4A
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 25A @ 60Hz
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Current - On State (it (rms) (max): 4A
• Current Squared Time Rating: 2.6
• Current, Forward: 4 A
• Current, Surge: 25 A
• Package Type: TO-225AA
• Primary Type: SCR
• Resistance, Thermal, Junction To Case: 3 °C/W
• Temperature, Junction, Maximum: +110 °C
• Temperature, Operating: -40 to +110 °C
• Voltage, Forward: 2 V
• Voltage, Reverse: 600 V
• Repetitive Peak Off-state Volt: 600V
• Off-state Voltage: 600V
• Average On-state Current: 2.55A
• Hold Current: 5mA
• Gate Trigger Current (max): 200uA
• Gate Trigger Voltage (max): 1V
• Peak Reverse Gate Voltage: 6V
• Peak Repeat Off Current: 10uA
• Peak Surge On-state Current (max): 25A
• On State Voltage(max): 2@4AV
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Operating Temp Range: -40C to 110C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MCR106-8GOS

106
102
110
Symbol
V
I
V
I
V
I
98
94
90
86
82
DRM
RRM
H
DRM
RRM
TM
0
0.4
Figure 1. Maximum Case Temperature
= 30
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
I
0.8
T(AV)
, AVERAGE FORWARD CURRENT (AMP)
1.2
60
90
1.6
120
2.0
180
Voltage Current Characteristic of SCR
2.4
2.8
0
f = 60 Hz
3.2
http://onsemi.com
CURRENT DERATING
dc
3.6
4.0
3
I
Reverse Avalanche Region
Anode −
RRM
Reverse Blocking Region
110
90
70
50
30
at V
0
RRM
(off state)
Figure 2. Maximum Ambient Temperature
0.1
I
T(AV)
on state
0.2
, AVERAGE FORWARD CURRENT (AMP)
+ Current
0.3
Forward Blocking Region
= 30
I
H
0.4
V
TM
(off state)
60
0.5
I
DRM
0
90
f = 60 Hz
Anode +
at V
0.6
180
DRM
+ Voltage
0.7
dc
0.8