TS820-600B-TR STMicroelectronics, TS820-600B-TR Datasheet - Page 5

• Manufacturer Part Number: TS820-600B-TR
• Description: SCR 8A 600V DPAK
• Manufacturer: STMicroelectronics
• Type: SCRr

Specifications of TS820-600B-TR

• Scr Type: Sensitive Gate
• Voltage - Off State: 600V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.6V
• Current - On State (it (av)) (max): 5A
• Current - On State (it (rms)) (max): 8A
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 5µA
• Current - Non Rep. Surge 50, 60hz (itsm): 70A, 73A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current - On State (it (rms) (max): 8A
• Repetitive Peak Off-state Volt: 600V
• Off-state Voltage: 600V
• Average On-state Current: 5A
• Hold Current: 5mA
• Gate Trigger Current (max): 200uA
• Gate Trigger Voltage (max): 800mV
• Peak Reverse Gate Voltage: 8V
• Package Type: DPAK
• Peak Repeat Off Current: 5uA
• Peak Surge On-state Current (max): 73A
• On State Voltage(max): 1.6@16AV
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5234-2; TS820-600B-TR

TN805, TN815, TS820, TYN608, TYN808, TYN1008
Figure 9.
Figure 11. Surge peak on-state current versus
Figure 13. On-state characteristics (maximum
50.0
10.0
100
10.00
1.0
90
80
70
60
50
40
30
20
10
0.1
1.00
0.10
0.01
0
0.0
1
I
I
TSM
TM
0
dV/dt[R
TN8 / TS8
(A)
(A)
V =0.85V
R =46m
200
T max.:
t0
d
0.5
j
T
j
=max
GK
Relative variation of dV/dt immunity
versus gate-cathode resistance
(typical values) for TS820
number of cycles
values)
400
TYN08
Repetitive
T =110°C
] / dV/dt[
C
1.0
600
10
T =25°C
1.5
R
Non repetitive
T initial=25°C
Number of cycles
j
j
800
GK
R
=220 ]
V
GK
1000
TM
2.0
(k )
(V)
1200
2.5
100
1400
3.0
1600
V = 0.67 x V
t =10ms
p
D
One cycle
T
j
= 125°C
1800
Doc ID 7476 Rev 6
3.5
DRM
2000
1000
4.0
Figure 10. Relative variation of dV/dt immunity
Figure 12. Non-repetitive surge peak on-state
Figure 14. Thermal resistance junction to
100
1000
15.0
12.5
10.0
80
60
40
20
100
7.5
5.0
2.5
0.0
0
10
0.01
R
0
0
dV/dt[C
th(j-a)
I
TSM
20
2
(A), I t (A s)
dI/dt limitation
(°C/W)
GK
Sinusoidal pulse width tp < 10 ms
40
versus gate-cathode capacitance
(typical values) for TS820
current and corresponding values
of I
ambient versus copper surface
under tab (DPAK)
2
4
] / dV/dt[
2
2
60
t
6
0.10
R
80
GK
8
=220 ]
S(cm²)
C
100
t (ms)
p
GK
Epoxy printed circuit board FR4
copper thickness = 35 µm
10
(nF)
120
12
140
TN8 / TS8
1.00
I t
2
Characteristics
14
I
160
TSM
180
16
V = 0.67 x V
TN8 / TS8
TYN08
D
T initial = 25°C
TYN08
R
j
T
GK
j
= 125°C
= 220
200
18
DRM
10.00
5/12
220
20