MCR72-8G ON Semiconductor, MCR72-8G Datasheet - Page 3
![THYRISTOR SCR 8A 600V TO220AB](/photos/5/30/53087/488-to-220ab_sml.jpg)
MCR72-8G
Manufacturer Part Number
MCR72-8G
Description
THYRISTOR SCR 8A 600V TO220AB
Manufacturer
ON Semiconductor
Specifications of MCR72-8G
Scr Type
Sensitive Gate
Voltage - Off State
600V
Voltage - Gate Trigger (vgt) (max)
1.5V
Voltage - On State (vtm) (max)
2V
Current - On State (it (rms)) (max)
8A
Current - Gate Trigger (igt) (max)
200µA
Current - Hold (ih) (max)
6mA
Current - Off State (max)
10µA
Current - Non Rep. Surge 50, 60hz (itsm)
100A @ 60Hz
Operating Temperature
-40°C ~ 110°C
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current - On State (it (rms) (max)
8A
Current Squared Time Rating
40
Current, Forward
8 A
Current, Surge
100 A
Package Type
TO-220AB
Primary Type
SCR
Resistance, Thermal, Junction To Case
2.2 °C/W
Temperature, Junction, Maximum
+110 °C
Temperature, Operating
-40 to +110 °C
Voltage, Forward
1.7 V
Voltage, Reverse
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - On State (it (av)) (max)
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
MCR72-8GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCR72-8G
Manufacturer:
ON Semiconductor
Quantity:
1 981
Company:
Part Number:
MCR72-8G
Manufacturer:
ON
Quantity:
18 000
2. Ratings apply for negative gate voltage or R
3. R
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Secs
Peak Repetitive Forward or Reverse Blocking Current (Note 2)
High Logic Level Supply Current from V
Peak Forward On-State Voltage
Gate Trigger Current (Continuous dc) (Note 3)
Gate Trigger Voltage (Continuous dc) (Note 3)
Gate Non−Trigger Voltage
Holding Current
Gate Controlled Turn-On Time
Critical Rate-of-Rise of Off-State Voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the
voltage applied exceeds the rated blocking voltage.
(V
(I
(V
(V
(V
(V
(V
(V
GK
TM
AK
D
D
D
D
D
D
current not included in measurement.
= 12 V, R
= 12 V, R
= 12 Vdc, R
= 12 V, Initiating Current = 200 mA, R
= Rated V
= Rated V
= 16 A Peak, Pulse Width p 1 ms, Duty Cycle p 2%)
= Rated V
L
L
DRM
DRM
DRM
= 100 W)
= 100 W)
L
= 100 W, T
, I
, R
or V
TM
GK
= 16 A, I
RRM
= 1 kW, T
; R
J
= 110 C)
Characteristic
Characteristic
GK
G
J
= 2 mA)
= 1 kW)
= 110 C, Exponential Waveform)
CC
(T
C
= 25 C unless otherwise noted.)
GK
GK
= 1 kW)
= 1 kW. Devices shall not have a positive gate voltage concurrently with a negative voltage
T
T
3
J
J
= 25 C
= 110 C
I
DRM
Symbol
Symbol
R
dv/dt
R
I
V
V
V
CCH
I
T
t
GT
I
qJC
qJA
, I
TM
GD
GT
gt
H
L
RRM
Min
0.1
−
−
4
−
−
−
−
−
−
Max
Typ
260
2.2
1.7
0.5
1.0
60
30
10
−
−
4
−
−
Max
500
200
2.0
1.5
6.0
mA
10
−
−
−
Unit
Unit
V/ms
C/W
C/W
mA
mA
mA
mA
mA
ms
V
V
V
C